Abstract:
Fundamental understanding of radical-surface interactions during plasma deposition of Si thin films is essential for developing rational deposition strategies. We have de...Show MoreMetadata
Abstract:
Fundamental understanding of radical-surface interactions during plasma deposition of Si thin films is essential for developing rational deposition strategies. We have developed a visualization tool for monitoring the surface bond strain evolution during film growth. This tool is used to examine the local structural changes in the vicinity of the growth surface when a chemical reaction occurs during molecular-dynamics (MD) simulations of Si thin-film deposition and aids in the analysis of radical-surface interactions. Results are presented for the surface bond strain distribution when an SiH3 radical inserts into an Si-Si dimer on an H-terminated Si(001)-(2 x 1) surface during the initial stage of deposition. This type of analysis is particularly helpful in understanding the reactions and migration of the SiH3 radical on the surface of plasma-deposited hydrogenated amorphous Si films.
Published in: IEEE Transactions on Plasma Science ( Volume: 30, Issue: 1, February 2002)
Department of Chemical Engineering, University of California, Santa Barbara, CA, USA
Department of Chemical Engineering, University of California, Santa Barbara, CA, USA
Department of Chemical Engineering, University of California, Santa Barbara, CA, USA
Contents Department of Chemical Engineering, University of California, Santa Barbara, CA, USA
Department of Chemical Engineering, University of California, Santa Barbara, CA, USA
Department of Chemical Engineering, University of California, Santa Barbara, CA, USA
