AlGaN/GaN FinFETs with nano-sized Fin width from 20 nm to 230 nm are characterized using low-frequency noise measurement. All devices exhibit 1/f noise shape with Hooge m...
Abstract:
AlGaN/GaN Fin-shaped field-effect transistors (FinFETs) with nano-sized Fin width ( \text{W}_{\mathrm {Fin}} ) from 20 nm to 230 nm are characterized using low-frequenc...Show MoreMetadata
Abstract:
AlGaN/GaN Fin-shaped field-effect transistors (FinFETs) with nano-sized Fin width ( \text{W}_{\mathrm {Fin}} ) from 20 nm to 230 nm are characterized using low-frequency noise (LFN) measurement. All devices exhibit 1/ f noise shape with Hooge mobility fluctuations (HMF) at subthreshold region and carrier number fluctuations (CNF) at accumulation region. However, the lowest normalized drain current noise spectral densities ( S_{Id}/I_{d}^{2} ) are obtained in the narrow Fin device ( \text{W}_{\mathrm {Fin}} = 20 nm). This is due to significant contribution of bulk channel without the 2-dimensional electron gas density (2DEG) channel and two sidewall metal-oxide-semiconductor (MOS) channels. It is also noticed that the lowest trap density ( N_{t} ) and a large separation in CNF noise model clearly indicate to the volume accumulation effect caused by bulk conduction in narrow device. The Hooge constants ( \alpha _{\mathrm {H}} ) extracted by HMF noise model for the narrow device are one-order higher than those of the wide Fin device, which tells that the narrow device suffers from the strong phonon scattering in the bulk channel. From the product of ( S_{Id} \times frequency ( f )) versus \text{I}_{\mathrm {d}} curves, the volume accumulation phenomenon is also clearly observed in narrow Fin device.
AlGaN/GaN FinFETs with nano-sized Fin width from 20 nm to 230 nm are characterized using low-frequency noise measurement. All devices exhibit 1/f noise shape with Hooge m...
Published in: IEEE Access ( Volume: 11)