Abstract:
Monolithic integration of complementary field-effect transistor (CFET) with two-dimensional (2D) materials channels has been challenging due to the deteriorated performan...Show MoreMetadata
Abstract:
Monolithic integration of complementary field-effect transistor (CFET) with two-dimensional (2D) materials channels has been challenging due to the deteriorated performance of p-type transistors, especially using top-gate dielectric. In this work, we demonstrate monolithic 3D stacking CFET based on chemical-vapor-deposition (CVD) grown 2D materials channels for low-power integrated circuits (ICs). The top gate p-channel bilayer WSe2 transistor is optimized by low-temperature post-metal annealing, achieving a record-high \text{I}_{\text{o}\text{n}} of -594\muA/\mum and \text{G}_{\text{m}} of -244\muS/\mum at \text{V}_{\text{d}}=-2V with a short \text{L}_{\text{c}\text{h}}=135 nm, far exceeding previous results. Furthermore, full-output-swing inverters with rail-to-rail operations and below-nanowatt low power are achieved owing to the symmetrical threshold voltages for WSe2 pFETs and MoS2 nFETs. The 4T SRAM and 16T half-adder circuit units based on CFET design are also experimentally demonstrated for the first time, presenting the superiority of CFET in performance, power, and area (PPA).
Published in: 2022 International Electron Devices Meeting (IEDM)
Date of Conference: 03-07 December 2022
Date Added to IEEE Xplore: 23 January 2023
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- IEEE Keywords
- Index Terms
- 3D Integration ,
- Monolithic 3D ,
- Monolithic 3D Integration ,
- Complementary Field-effect Transistor ,
- 2D Materials ,
- Inverter ,
- Low-temperature Annealing ,
- Top Gate ,
- Fabrication Process ,
- Statistical Distribution ,
- Output Feature ,
- Transfer Characteristics ,
- Bistable ,
- Resistant Parasites ,
- Transition Metal Dichalcogenides ,
- Gate Dielectric ,
- Metal Gate ,
- MoS2 Film ,
- Two-dimensional Transition Metal Dichalcogenides ,
- Device Gate
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- 3D Integration ,
- Monolithic 3D ,
- Monolithic 3D Integration ,
- Complementary Field-effect Transistor ,
- 2D Materials ,
- Inverter ,
- Low-temperature Annealing ,
- Top Gate ,
- Fabrication Process ,
- Statistical Distribution ,
- Output Feature ,
- Transfer Characteristics ,
- Bistable ,
- Resistant Parasites ,
- Transition Metal Dichalcogenides ,
- Gate Dielectric ,
- Metal Gate ,
- MoS2 Film ,
- Two-dimensional Transition Metal Dichalcogenides ,
- Device Gate