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Ramachandran Muralidhar - IEEE Xplore Author Profile
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Ramachandran Muralidhar

Also published under: R. Muralidhar

Publications
36
Citations
374
Publications by Year
19982023
Co-Authors:
Show All Co-Authors (212)
Image of author Ramachandran Muralidhar

Ramachandran Muralidhar

Also published under: R. Muralidhar

Affiliation

IBM T. J. Watson Research Center
Yorktown Heights
NY, USA

Publication Topics

Biography

Ramachandran Muralidhar received the Ph.D. degree in chemical engineering in 1988, in the area of colloid science and mathematical modeling of transport processes and chemical reaction in dispersed phase systems. From 1988 to 1991, he was a Post-Doctoral Research Associate at Purdue University, West Lafayette, IN, USA, in the areas of statistical physics and physical chemistry. From 1991 to 1995, he worked in Mobil Research and Development Corporation, where he made significant contributions to the development of a novel alkylation process. From 1995, he has been in semiconductor research and development first with Motorola and subsequently with IBM. He has broad expertise in modeling phenomena from molecular scale to continuum including el...
Publications
36
Citations
374
Publications by Year
19982023
Co-Authors:
Show All Co-Authors (212)
Author's Published Works

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A method for rapid screening of various low-k TDDB models

Fen Chen;Carole Graas;Michael Shinosky;Chad Burke;Kai D Feng;Craig Bocash;Ramachandran Muralidhar

2015 IEEE International Reliability Physics Symposium
Year: 2015 | Conference Paper |
Cited by: Papers (3)
Voltage or Field acceleration model is crucial for low-k TDDB reliability study and lifetime projection. Over the years, many different acceleration models have been proposed based on different physics. In this paper, a method for a relatively fast screen of various low-k TDDB models is proposed. Fast voltage ramp test to establish a relation of JE slope versus stress field is the first step. Stud...Show More

A method for rapid screening of various low-k TDDB models

Fen Chen;Carole Graas;Michael Shinosky;Chad Burke;Kai D Feng;Craig Bocash;Ramachandran Muralidhar

Year: 2015 | Conference Paper |

Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues

Fen Chen;Steve Mittl;Michael Shinosky;Ann Swift;Rick Kontra;Brent Anderson;John Aitken;Yanfeng Wang;Emily Kinser;Mahender Kumar;Yun Wang;Terence Kane;Kai D. Feng;William K Henson;Dan Mocuta;Di-an Li

2012 IEEE International Reliability Physics Symposium (IRPS)
Year: 2012 | Conference Paper |
The minimum insulator spacing between the polysilicon control gate (PC) and the diffusion contacts (CA) in advanced VLSI circuits is aggressively shrinking due to continuous technology scaling. Meanwhile, rapid adoptions of new materials such as metal gate, epitaxial SiGe source /drain, stress liner, and copper contact together with new device configurations such as raised source/drain and FinFET ...Show More

Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues

Fen Chen;Steve Mittl;Michael Shinosky;Ann Swift;Rick Kontra;Brent Anderson;John Aitken;Yanfeng Wang;Emily Kinser;Mahender Kumar;Yun Wang;Terence Kane;Kai D. Feng;William K Henson;Dan Mocuta;Di-an Li

Year: 2012 | Conference Paper |

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