Michele Miller - IEEE Xplore Author Profile
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Michele Miller

Also published under: Michele H. Miller

Publications
9
Citations
15
Publications by Year
20092018
Co-Authors:
Show All Co-Authors (23)
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Michele Miller

Also published under: Michele H. Miller

Affiliation

School of Engineering
Campbell University
Buies Creek, NC, USA

Publication Topics

Biography

Michele Miller, Associate Professor, Michigan Technological University, mhmiller@mtu.edu.(Based on document published on 2 February 2012).
Publications
9
Citations
15
Publications by Year
20092018
Co-Authors:
Show All Co-Authors (23)
Author's Published Works

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A method for rapid screening of various low-k TDDB models

Fen Chen;Carole Graas;Michael Shinosky;Chad Burke;Kai D Feng;Craig Bocash;Ramachandran Muralidhar

2015 IEEE International Reliability Physics Symposium
Year: 2015 | Conference Paper |
Cited by: Papers (3)
Voltage or Field acceleration model is crucial for low-k TDDB reliability study and lifetime projection. Over the years, many different acceleration models have been proposed based on different physics. In this paper, a method for a relatively fast screen of various low-k TDDB models is proposed. Fast voltage ramp test to establish a relation of JE slope versus stress field is the first step. Stud...Show More

A method for rapid screening of various low-k TDDB models

Fen Chen;Carole Graas;Michael Shinosky;Chad Burke;Kai D Feng;Craig Bocash;Ramachandran Muralidhar

Year: 2015 | Conference Paper |

Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues

Fen Chen;Steve Mittl;Michael Shinosky;Ann Swift;Rick Kontra;Brent Anderson;John Aitken;Yanfeng Wang;Emily Kinser;Mahender Kumar;Yun Wang;Terence Kane;Kai D. Feng;William K Henson;Dan Mocuta;Di-an Li

2012 IEEE International Reliability Physics Symposium (IRPS)
Year: 2012 | Conference Paper |
The minimum insulator spacing between the polysilicon control gate (PC) and the diffusion contacts (CA) in advanced VLSI circuits is aggressively shrinking due to continuous technology scaling. Meanwhile, rapid adoptions of new materials such as metal gate, epitaxial SiGe source /drain, stress liner, and copper contact together with new device configurations such as raised source/drain and FinFET ...Show More

Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues

Fen Chen;Steve Mittl;Michael Shinosky;Ann Swift;Rick Kontra;Brent Anderson;John Aitken;Yanfeng Wang;Emily Kinser;Mahender Kumar;Yun Wang;Terence Kane;Kai D. Feng;William K Henson;Dan Mocuta;Di-an Li

Year: 2012 | Conference Paper |

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