This paper presents a theoretical study about quantum dot solar cells by means of numerical simulations, considering different doping levels in the intrinsic region of the cells, with the aim of evaluating the effect on the device's power conversion efficiency. Results of simulations performed over GaAs solar cells with InAs quantum dots, based on two different fabrication processes, are reported....Show More
In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+/cm2. The simulation results allow to obtain the optimum solar cell with specific ...Show More
An iterative method applied to enhance the proton radiation tolerance and the responsivity of PIN photodiodes was developed. The method allows to calculate optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total rev...Show More
