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An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for X- and Ku-band power applications
J.C. Huang;G. Jackson;S. Shanfield;W. Hoke;P. Lyman;D. Atwood;P. Saledas;M. Schindler;Y. Tajima;A. Platzker;D. Masse;H. Statz
1991 IEEE MTT-S International Microwave Symposium Digest
Year: 1991 | Conference Paper |
A PHEMT with record-high output power, gain and power-added efficiency at 10 and 18 GHz has been achieved due to the use of a novel method to improve the gate-drain reverse breakdown voltage. A critical surface problem was uncovered and resolved. Silicon nitride was deposited as surface passivation. The results of this work suggest that, in addition to superior low-noise performance, the PHEMT is ...Show More
We have developed a GaAs FET model suitable for SPICE Circuit simulations. The dc equations are accurate to about 1 percent of the maximum drain current. A simple but accurate interpolation formula for drain current as a function of gate-to-source voltage connects the square-law behavior just above pinchoff and the square-root law for larger values of the drain current. The ac equations, with char...Show More
It is shown that source and drain charges are not state variables in an FET, especially for source-drain voltages near zero. This behavior, observed in the model proposed in [2], is a genuine manifestation of the physics of FET's and is not a sign of improper behavior in a circuit simulator. However, if necessary, one may construct a model having these charges as state variables by introducing a c...Show More
A 2.2GHz transmission gate GaAs shift register
1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
Year: 1985 | Conference Paper |
Cited by: Papers (5)
The development of a 8b GaAs shift register employing transmission gates operating at clock rates up to 2.2GHz will be discussed. Low speed operation down to 1MHz has been demonstrated.Show More
The locking of two countertraveling ring laser modes due to light scattering is investigated. It is found that the mutual locking of two free-running oscillating modes is different from locking due to an externally injected signal. The text defines two kinds of mode-to-mode scattering: conservative and nonconservative. The former leads to no locking, to a high degree of approximation. Examples of ...Show More
Avalanche response time in GaAs as determined from microwave admittance measurements
Microwave admittance measurements in a high power GaAs double-drift Read diode are fitted to an analytical solution to the Read equation. The data can be explained within experimental error by the classical expression for intrinsic avalanche time\tau_{i} = l_{a}/3v_{S}. This is at variance with the prediction that τiin GaAs may be anomalously long.Show More
We show that a certain fundamental limit applies to the accuracy of all optical rotation sensors which use laser light as a probe. We derive this fundamental rotation-rate uncertainty from the Heisenberg uncertainty relations and Glauber's minimum uncertainty states. The same relationship is obtained from a spontaneous-emission noise formulation. We present experimental data on a (nondithered) fou...Show More
A new IMPATT diode structure is proposed. The device incorporates a heterojunction between materials having different electric field saturated carrier velocities. Analysis shows that such a diode can have significantly higher dc-to-microwave-power conversion efficiencies than conventional Read IMPATT diodes.Show More
Conduction current injection delay in Read GaAs IMPATT diodes
We find experimentally that, for GaAs Read avalanche diodes, the optimal drift region width is not simply inversely proportional to optimum frequency. This finding can be understood by noting that the injection phase of the avalanche current into the drift region is not 90° with respect to the voltage maximum, but varies as a function of frequency. The experimental observations are in reasonable a...Show More
Frequency increase in pulsed avalanche diodes
We have tested many GaAs IMPATT diodes under high power pulsed conditions and found that the best power output and efficiency occur at higher frequencies in the pulsed mode than in the CW mode. This phenomenon can be understood by considering the effect on the avalanche region field produced by the space charge of the carriers injected into the drift zone. Qualitative agreement is demonstrated bet...Show More
Large-signal dynamic loss in gallium arsenide read avalanche diodes
In this paper we show that very large displacement currents may flow in high power Read diodes, especially when they are operated in the pulsed mode. These displacement currents may have peak amplitudes which are larger than the maximum possible conduction currents in the undepleted material. When this occurs, then the conduction current in the undepleted material must be augmented by a displaceme...Show More
Noise in gallium arsenide avalanche Read diodes
The noise and signal properties of Read-type avalanche diodes under large-signal levels are examined. In contrast to most other previous theories, we include the saturation current in the equations rigorously from the beginning. We find that the noise performance is a strong function of the saturation current such that high saturation currents lead to lower noise performance. We compare the findin...Show More
Noise characteristics of gallium arsenide field-effect transistors
Small signal and noise characteristics for GaAs field-effect transistors are derived with the saturated drift velocity of the carriers underneath the gate taken into account. The noise contributed by the saturated carriers is nonnegligible and in most cases, exceeds the noise generated by the unsaturated region. Parasitic elements contribute importantly by preventing the full cancellation of the c...Show More
We estimate the ultimate noise of Gunn oscillators in the absence of 1/fnoise. The basic noise source considered is thermal or Johnson noise augmented by intervalley noise of carriers hopping between the high and low mobility bands. For example, for Qext= 102and Pout=10-1W we estimate δfrms≈ 1-2 Hz, and AM noise relative to the carrier of -156 dD, both measured in 1-kHz bandwidths.Show More
A noise source arising from velocity fluctuations of drifting carriers in the depletion region of the metal-semiconductor-metal (MSM) diode is identified. This source of noise adds to the shot noise and becomes prominent at high current densities, when the shot-noise contribution is small because of space-charge smoothing.Show More
Optimum Noise Measure of IMPATT Diodes
An attempt is made to determine some of the factors responsible for the noise performance of avalanche diodes. In particular we are interested whether there are any lower lids in the noise measure. We derive a theorem which shows that there is a lower limit M/sub opt/ = 1/2 q/ /spl alpha'/kT for an IMPATT diode which has a constant value of a', where M/sub opt/ is the optimum noise measure, q is t...Show More
Probabilities for radiative transitions in the carbon dioxide laser system
First Page of the Article
Show MoreFirst Page of the Article
Show MoreIn this paper, experimental and theoretical results of a detailed study of the Zeeman effects in a gaseous He-Ne optical maser under weak and normal excitation conditions are given. Attention is confined to the strongest maser emission line (2s2→2p4). Under weak excitation conditions, the maser emission is a doublet of right and left circularly polarized waves. These may belong to either the same ...Show More
New devices are considered in which electrons or holes are injected directly into space-charge regions of reversebiased junctions avoiding the diffusion of carriers through field-free regions. The case considered is one in which the junction is biased at a voltage such that the injected carriers are multiplied by the avalanche process. A device of this type shall be called a spacistor. It is shown...Show More
The basic idea in these devices is to achieve a good high-frequency response by using processes which are localized in the high-field region of reverse-biased p-n junctions. Structures have been proposed previously which use one injecting contact in the space-charge region. These devices have disadvantages which may be overcome by going to devices with two contacts in the space-charge region. Thes...Show More
This paper describes briefly charge-carrier multiplication, avalanche breakdown, and the effect of a greater than unity in junction transistors. The electrical characteristics in the α> 1 region and for the transition from α 1 are discussed. One example of the useful applications is included in order to discuss some of the effects of the transistor parameters on cir...Show More
The analytical solution of the diffusion equation has been used to construct an accurate equivalent circuit of the junction transistor. All network components are expressed in terms of the physical parameters of the transistor. This network has been used to calculate Mason's U-function, which in turn gives the highest frequency at which a transistor can give a power gain. From the derived formula,...Show More
Contributors, Oct. 1971
H.A. Haus;K. Kurokawa;W.H. Leighton;A.G. Milnes;R.A. Pucel;G.M. Royer;H. Statz
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