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Review of technology for 157-nm lithography
A. K. Bates;M. Rothschild;T. M. Bloomstein;T. H. Fedynyshyn;R. R. Kunz;V. Liberman;M. Switkes
This paper outlines the critical issues facing the implementation of 157-nm lithography as a sub-100-nm technology. The status of the present technology for mask materials, pellicles, optical materials, coatings, and resists is presented.Show More
Lithography at a wavelength of 193 nm
M. Rothschild;A. R. Forte;R. R. Kunz;S. C. Palmateer;J. H. C. Sedlacek
The trend in microelectronics toward printing features 0.25 µm and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm requires parallel progress in projection systems, optical materials, and photor...Show More
Photolithography using 193-nm light appears to be a viable route for the extension of optical lithography to the dimensions required for the manufacture of 1Gb DRAM and advanced CMOS microprocessors with 180-140-nm minimum feature sizes. In this paper, we discuss the origin of resist technology for 193-nm lithography and the current status of 193-nm photoresists, focusing on single-layer resist ma...Show More
Thin-film imaging: Past, present, prognosis
D. E. Seeger;D. C. La Tulipe;R. R. Kunz;C. M. Garza;M. A. Hanratty
As the limitations of conventional optical lithography approach, potential extensions of a current technology are examined more closely. One of these extensions is to limit the photoresist thickness that is needed for recording the imaging information. Because the low etch resistance of resist typically precludes the use solely of resists utilizing very thin film, a variety of alternatives have be...Show More
Performance of a low power fully-depleted deep submicron SOI technology and its extension to 0.15 /spl mu/m
J.A. Burns;C.L. Keast;J.M. Knecht;R.R. Kunz;S.C. Palmateer;S. Cann;A. Soares;D.C. Shaver
1996 IEEE International SOI Conference Proceedings
Year: 1996 | Conference Paper |
Cited by: Papers (4)
Lincoln Laboratory has developed a fully-depleted silicon-on-insulator (SOI) technology to build integrated circuits designed for very low power operation and fabricated at the limits of optical lithography. A 0.25 /spl mu/m (drawn gate length) fully-depleted SOI CMOS process technology was established using 248-nm optical lithography for initial process demonstrations, and to identify nonlithogra...Show More
193-nm lithography
M. Rothschild;A.R. Forte;M.W. Horn;R.R. Kunz;S.C. Palmateer;J.H.C. Sedlacek
The trend in microelectronics toward printing features 0.25 /spl mu/m and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials,...Show More
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