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Chris Coldren - IEEE Xplore Author Profile
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Chris Coldren

Also published under: C. W. Coldren, C. Coldren

Publications
17
Citations
428
Publications by Year
19982008
Co-Authors:
Show All Co-Authors (39)
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Chris Coldren

Also published under: C. W. Coldren, C. Coldren

Affiliation

JDS Uniphase Corporation
Goleta
CA, USA

Publication Topics

Biography

Chris Coldren photograph and biography not available at the time of publication.(Based on document published on 8 April 2008).
Publications
17
Citations
428
Publications by Year
19982008
Co-Authors:
Show All Co-Authors (39)
Author's Published Works

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Improving the Performance of Sampled-Grating DBR Laser-Based Analog Optical Transmitters

Leif A. Johansson;Yuliya A. Akulova;Chris Coldren;Larry A. Coldren

Journal of Lightwave Technology
Year: 2008 | Volume: 26, Issue: 7 | Journal Article |
Cited by: Papers (3)
In this paper, the available analog link performance of integrated transmitters containing a sampled-grating distributed Bragg reflector laser, a semiconductor optical amplifier, and a modulator is evaluated. It is found that to provide a link gain and a low-noise figure, an RF preamplifier is required, and for this reason, spurious-free dynamic range (SFDR) including a preamplifier has been evalu...Show More

Improving the Performance of Sampled-Grating DBR Laser-Based Analog Optical Transmitters

Leif A. Johansson;Yuliya A. Akulova;Chris Coldren;Larry A. Coldren

Year: 2008 | Volume: 26, Issue: 7 | Journal Article |

Tunable semiconductor lasers: a tutorial

L.A. Coldren;G.A. Fish;Y. Akulova;J.S. Barton;L. Johansson;C.W. Coldren

Journal of Lightwave Technology
Year: 2004 | Volume: 22, Issue: 1 | Journal Article |
Tunable semiconductor lasers have been listed in numerous critical technology lists for future optical communication and sensing systems. This paper summarizes a tutorial that was given at OFC '03. It includes some discussion of why tunable lasers might be beneficial, an outline of basic tuning mechanisms, some examples of tunable lasers that have been commercialized, and a discussion of control t...Show More

Tunable semiconductor lasers: a tutorial

L.A. Coldren;G.A. Fish;Y. Akulova;J.S. Barton;L. Johansson;C.W. Coldren

Year: 2004 | Volume: 22, Issue: 1 | Journal Article |

Reliability of widely-tunable SGDBR lasers suitable for deployment in agile networks

C. Coldren;T. Strand;E. Hegblom;Y. Akulova;G. Fish;M. Larson;L. Coldren

OFC 2003 Optical Fiber Communications Conference, 2003.
Year: 2003 | Conference Paper |
Cited by: Papers (2)
We present reliability data on widely tunable diode lasers with sampled grating Bragg mirrors. The lasers have a median life over two hundred years with a wear-out failure rate below 200 failures per billion device-hours.Show More

Reliability of widely-tunable SGDBR lasers suitable for deployment in agile networks

C. Coldren;T. Strand;E. Hegblom;Y. Akulova;G. Fish;M. Larson;L. Coldren

Year: 2003 | Conference Paper |

Widely tunable electroabsorption-modulated sampled-grating DBR laser transmitter

Y.A. Akulova;G.A. Fish;Ping-Chiek Koh;C.L. Schow;P. Kozodoy;A.P. Dahl;S. Nakagawa;M.C. Larson;M.P. Mack;T.A. Strand;C.W. Coldren;E. Hegblom;S.K. Penniman;T. Wipiejewski;L.A. Coldren

IEEE Journal of Selected Topics in Quantum Electronics
Year: 2002 | Volume: 8, Issue: 6 | Journal Article |
We report on a widely tunable transmitter based on a sampled-grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with a semiconductor optical amplifier (SOA) and an electroabsorption (EA) modulator. Modulated time-averaged powers in excess of 5 dBm, RF extinction ratios >10 dB, and error-free transmission at 2.5 Gb/s for 350 km of standard single-mode fiber have been demon...Show More

Widely tunable electroabsorption-modulated sampled-grating DBR laser transmitter

Y.A. Akulova;G.A. Fish;Ping-Chiek Koh;C.L. Schow;P. Kozodoy;A.P. Dahl;S. Nakagawa;M.C. Larson;M.P. Mack;T.A. Strand;C.W. Coldren;E. Hegblom;S.K. Penniman;T. Wipiejewski;L.A. Coldren

Year: 2002 | Volume: 8, Issue: 6 | Journal Article |

GaInNAs long wavelength vertical cavity lasers

M.C. Larson;C.W. Coldren;S.G. Spruytte;H.E. Petersen;H.E. Garrett;J.S. Harris

Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557)
Year: 2001 | Conference Paper |
We describe low-threshold (/spl sim/1 mA) GaInNAs VCSELs emitting at a wavelength of 1.2 /spl mu/m under continuous-wave room temperature operation. The bottom mirror consists of a 22.5-period n-doped GaAs/AlAs distributed Bragg reflector (DBR) designed for a center wavelength /spl lambda/ near 1.2 /spl mu/m, the top mirror is a 20-period p-doped DBR with a Ti/Au contact electrode, and the GaAs /s...Show More

GaInNAs long wavelength vertical cavity lasers

M.C. Larson;C.W. Coldren;S.G. Spruytte;H.E. Petersen;H.E. Garrett;J.S. Harris

Year: 2001 | Conference Paper |

Pulsed 25-108/spl deg/C operation of GaInNAs multiple quantum well vertical cavity lasers

C.W. Coldren;M.C. Larson;S.G. Spruytte;H.E. Garrett;J.S. Harris

Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088)
Year: 2000 | Conference Paper |
Cited by: Papers (4)
Summary form only given.GaAs-based vertical cavity surface emitting laser (VCSEL) diodes are becoming increasingly important in transmitters. By using GaInNAs MQW active regions, the emission wavelength of GaAs-based lasers can be extended into the range of 1200-1300 nm. In addition, the reduced temperature sensitivity of this active region allows for the possibility of uncooled transmitter operat...Show More

Pulsed 25-108/spl deg/C operation of GaInNAs multiple quantum well vertical cavity lasers

C.W. Coldren;M.C. Larson;S.G. Spruytte;H.E. Garrett;J.S. Harris

Year: 2000 | Conference Paper |

Low threshold current continuous-wave GaInNAs/GaAs VCSELs

M.C. Larson;C.W. Coldren;S.G. Spruytte;H.E. Petersen;J.S. Harris

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
Year: 2000 | Conference Paper |
Cited by: Papers (1) | Patents (2)
Vertical cavity surface-emitting lasers (VCSELs) emitting near 0.85 /spl mu/m are becoming increasingly important for short-haul optical fiber transmission systems. These devices benefit from highly reflective and thermally conductive all-epitaxial GaAs-based mirrors and efficient transverse confinement through AlAs-oxide dielectric apertures. Extending this commercially-established technology to ...Show More

Low threshold current continuous-wave GaInNAs/GaAs VCSELs

M.C. Larson;C.W. Coldren;S.G. Spruytte;H.E. Petersen;J.S. Harris

Year: 2000 | Conference Paper |

Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers

M.C. Larson;C.W. Coldren;S.G. Spruytte;H.E. Petersen;J.S. Harris

IEEE Photonics Technology Letters
Year: 2000 | Volume: 12, Issue: 12 | Journal Article |
Cited by: Papers (23)
We report, for the first time, room temperature continuous-wave (CW) operation of GaInNAs vertical-cavity surface-emitting laser diodes emitting at a wavelength of 1.2 μm and grown all-epitaxially in a single step on a GaAs substrate. Oxide-apertured devices demonstrated CW threshold currents as low as 1 mA, slope efficiency above 0.045 W/A, and thermal impedance of 1.24 K/mW. Larger sized devices...Show More

Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers

M.C. Larson;C.W. Coldren;S.G. Spruytte;H.E. Petersen;J.S. Harris

Year: 2000 | Volume: 12, Issue: 12 | Journal Article |

Room temperature continuous-wave operation of GaInNAs long wavelength VCSELs

M.C. Larson;C.W. Coldren;S.G. Spruytte;H.E. Petersen;J.S. Harris

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)
Year: 2000 | Conference Paper |
Cited by: Papers (3)
Vertical cavity surface-emitting lasers (VCSELs) are becoming increasingly important for short-haul optical fiber transmission systems. Given the commercial success of GaAs-based 850 nm VCSELs, dramatic enhancements in transmission bandwidth and distance can be achieved in conventional single- and multi-mode fiber by extending the emission wavelength to the 1300 nm-1550 nm range. GaInNAs is a prom...Show More

Room temperature continuous-wave operation of GaInNAs long wavelength VCSELs

M.C. Larson;C.W. Coldren;S.G. Spruytte;H.E. Petersen;J.S. Harris

Year: 2000 | Conference Paper |

Incorporation of nitrogen in group III-nitrides-arsenides grown by molecular beam epitaxy (MBE)

S.G. Spruytte;C.W. Coldren;M.C. Larson;J.S. Harris

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)
Year: 2000 | Conference Paper |
Cited by: Papers (1)
Group III-nitride-arsenides were grown by MBE employing a nitrogen radio frequency (rf) plasma. To improve the luminescence efficiency, both GaNAs and GaInNAs must be annealed, this anneal improves the crystal quality but also causes nitrogen outdiffusion. Broad area lasers and vertical cavity surface emitting lasers (VCSELs) have been fabricated.Show More

Incorporation of nitrogen in group III-nitrides-arsenides grown by molecular beam epitaxy (MBE)

S.G. Spruytte;C.W. Coldren;M.C. Larson;J.S. Harris

Year: 2000 | Conference Paper |

Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics

S.G. Spruytte;M.C. Larson;W. Wampler;C.W. Coldren;J.S. Harris

2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498)
Year: 2000 | Conference Paper |
Cited by: Papers (1) | Patents (1)
Nitride-arsenides are promising materials for long wavelength opto-electronic devices grown on GaAs substrates. The photoluminescence intensity of GaNAs and GaInNAs quantum wells increases drastically and shifts to shorter wavelengths following high temperature anneal. A study of PL after different annealing conditions revealed that the wavelength shift and the intensity increase occur together. W...Show More

Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics

S.G. Spruytte;M.C. Larson;W. Wampler;C.W. Coldren;J.S. Harris

Year: 2000 | Conference Paper |

In-line fiber-optic filter using GaAs ARROW waveguide

E. Mao;C. Coldren;J.S. Harris;D. Yankelevich;O. Solgaard;A. Knoesen

Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178)
Year: 1998 | Conference Paper |
Cited by: Patents (1)
Summary form only given. We have demonstrated an inline fiber optic filter using a GaAs ARROW waveguide as the overlay. It has a rejection ratio of 11 dB and a bandwidth of 7 nm. The inclusion of quantum wells in the waveguide core will lead to a new class of integrated fiber devices, including modulators, detectors, amplifiers, and lasers.Show More

In-line fiber-optic filter using GaAs ARROW waveguide

E. Mao;C. Coldren;J.S. Harris;D. Yankelevich;O. Solgaard;A. Knoesen

Year: 1998 | Conference Paper |

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