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Tayfun Akin - IEEE Xplore Author Profile

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Thispaper introduces a novel, inherently simple, and all-silicon wafer-level fabrication and hermetic packaging method developed for MEMS devices. The proposed method uses two separate SOI wafers to form highly-doped through-silicon vias (TSVs) and suspended MEMS structures, respectively. These SOI wafers are then bonded by Au-Si eutectic bonding at 400 °C, achieving hermetic sealing and signal tr...Show More
A novel solid-liquid inter-diffusion (SLID) bonding process is developed allowing to use thin layers of the Au-Sn material in wafer-level microelectromechanical systems (MEMS) packaging while providing a good bonding strength. The bond material layers are designed to have a robust bond material configuration and a metallic bond with a high re-melting temperature, which is an important advantage of...Show More
This paper presents the realization of a single layer microbolometer pixel fabricated using only ZnO material coated with atomic layer deposition. Due to the stress-free nature and high temperature coefficient of resistance of the ALD coated ZnO material, it can be used both as structural and active layers in microbolometer detectors. The design, simulations, and the fabrication optimization of tw...Show More
This paper presents the design, fabrication, and characterization of a self-packaged three axis capacitive MEMS accelerometer fabricated by using only four masks that is capable of differentially sensing the externally applied accelerations in three orthogonal axes. Individual lateral and vertical axis accelerometers are fabricated in the same die on a SOI wafer, which is eutectically bonded to a ...Show More
This paper provides an overview of the studies and the current status for the development of a novel, low-cost, and CMOS foundry compatible approach for implementing microbolometers with standard CMOS and simple post-CMOS subtractive MEMS processes. This CMOS infrared detector technology is shortly called as the CMOS IR (CIR) technology, and it can be used to implement Focal Plane Arrays (FPAs) fo...Show More
This paper presents a novel wafer-level packaging method for shunt, capacitive RF MEMS switches using BCB as the adhesive interlayer. Fabrication and electrical characteristics of the proposed package were initially evaluated for 50 Ω CPW lines. Microwave measurements of these packaged test structures were fitted to a circuit model, which was later employed to optimize the package for RF MEMS swit...Show More
This study presents design, analysis, optimization, and fabrication of umbrella structures as an efficient quarter wave absorber within the Long Wave Infrared (LWIR) range for uncooled IR detectors. Both the effect of the ni-chrome (NiCr) layer and effect of varying pixel pitch sizes on the IR absorption performance of the umbrella structures are examined. An average of 96% absorption is measured ...Show More
This paper reports utilization of high-fill factor absorber structures integrated onto SOI diode type low-cost uncooled microbolometers for broadband absorption performance. Mechanical and optical simulations are performed to assess the enhancement and mechanical stability of the absorber structures. Reported first time in the literature, four types of different absorber structures are employed on...Show More
This paper presents a novel method for the fabrication of three-axis capacitive MEMS accelerometers by using low-temperature Au-Sn eutectic bonding that is applied to form a glass-silicon-glass multi-stack. The proposed method provides the implementation of individual in-plane and out-of-plane accelerometer elements in the same die using a glass-silicon-glass multi-stack structure formed at temper...Show More
This paper presents a single-axis, self-resonating accelerometer. The presented accelerometer incorporates a resonating sensing element which is used along with a closed-loop self-resonance circuit, and the analog force-feedback readout circuit. During operation, the sensing element is oscillated at its fundamental frequency through dedicated actuation electrodes in closed-loop configuration. This...Show More
This study reports a temperature compensation method for a capacitive MEMS accelerometer by using a MEMS double-ended-tuning-fork (DETF) resonator integrated with the accelerometer structure on the same die. The proposed method utilizes the frequency information of the clamped-clamped DETF resonator which is oscillating in a closed-loop operation. In order to compensate the temperature dependence ...Show More
In this paper, the design and fabrication of a new radio frequency (RF) microelectromechanical system (MEMS) switch structure is presented. This RF MEMS switch is developed to get the minimum permanent deformation on the microbridge after 200 °C thermal treatment. The residual stress-based buckling on the MEMS bridge is simulated for 5-40-MPa/μm stress gradient (Aσ) with 5-MPa/μm steps. The temper...Show More
This paper presents a new fabrication approach and a design for the fabrication of a three-axis capacitive MEMS accelerometer where differential sensing is enabled for all sense directions. In this approach, individual lateral and vertical axis accelerometers are fabricated in the same die on an SOI wafer which is eutectically bonded to a glass substrate. Differential sensing for the vertical axis...Show More
This paper presents an out-of-plane (z-axis) accelerometer, which incorporates the use of two different MEMS capacitive electrode structures in combination for implementing a linear closed-loop system. During the implementation, the complexity of the design and fabrication steps of the sensing element is kept at a minimum. The proposed accelerometer uses capacitive MEMS sensing element fabricated ...Show More
This paper presents millimeter wave phased array antenna for short range communication applications at 35 GHz. The antenna array is formed by 1 × 16 microstrip antipodal tapered slot antennas each connected to RF MEMS phase shifters for beam steering. The simulation and measurement results of the single antenna element are presented and the phase shifter structure to be used in the array is descri...Show More
This paper presents a high-performance three-axis capacitive microelectromechanical system (MEMS) accelerometer implemented by fabricating individual lateral and vertical differential accelerometers in the same die. The fabrication process is based on the formation of a glass-silicon-glass multi-stack. First, a 35-μm (111) silicon structural layer of an Silicon-On-Insulator (SOI) wafer is patterne...Show More
This paper presents a novel, inherently simple and low-cost fabrication and hermetic packaging method developed for SOI-MEMS devices, where an SOI wafer is used for the fabrication of MEMS structures as well as vertical feedthroughs, while a glass cap wafer is used for hermetic encapsulation and routing metallization. Glass-to-silicon anodically bonded seals yield a very stable cavity pressure of ...Show More
This paper reports a closed-loop controller system developed for in-run automatic matching of the drive and sense mode resonance frequencies of a MEMS gyroscope with a high quality factor (Q). This is achieved by injecting a perturbation signal to the quadrature cancellation loop, while keeping it decoupled from the angular rate control loop. The new controller is implemented in a CMOS ASIC togeth...Show More
This paper presents a fully-integrated lab-on-a-chip (LOC) system for label-free detection and real-time counting of dielectrophoretically trapped multidrug resistant (MDR) K562 cells. The system integrates a parylene-based microfluidic DEP channel on top of a CMOS image sensor for the first time in the literature. The DEP channel can trap MDR K562 cells with 9 Vpp and 10 μl/min flow rate, and the...Show More
This paper presents the architecture and experimental verification of an automatic acceleration compensation system applied to a single-mass MEMS gyroscope. The proposed method eliminates low frequency proof mass motion of the gyroscope due to external accelerations, suppressing the g-sensitivity of the gyroscope bias up to 12 times. This is achieved by dedicated acceleration cancellation electrod...Show More
This paper presents the recent reduction of the die size by 44% in the Advanced MEMS (aMEMS) process, now being compatible in size with most of the available through-wafer packaging processes while offering the unique simplicity of the aMEMS process. Size reduction is achieved by reducing the pitch of vertical feedthroughs from 700 μm down to 350 μm and the bonding area width from 300 μm down to 1...Show More
This paper presents a single mass 2-axis MEMS capacitive accelerometer with a unique force rebalance method achieved with the readout circuit developed for the simultaneous 2-axis acceleration sensing. Using a single mass structure with extra fingers for reading multiple axes allows better sensor performances when compared to multi-axis accelerometers with individual proof masses occupying the sam...Show More
This paper reports a novel and inherently simple fabrication process, so-called advanced MEMS (aMEMS) process, that is developed for high-yield and reliable manufacturing of wafer-level hermetic encapsulated MEMS devices. The process enables lead transfer using vertical feedthroughs formed on an Silicon-On-Insulator (SOI) wafer without requiring any complex via-refill or trench-refill processes. I...Show More
This paper presents a novel and inherently simple all-silicon fabrication and hermetic packaging method developed for SOI-MEMS devices, enabling lead transfer using vertical feedthroughs formed on an SOI cap wafer. The processes of the SOI cap wafer and the SOI-MEMS wafer require a total of five inherently-simple mask steps, providing a combined process and packaging yield as high as 95%. The herm...Show More
This paper presents the fabrication of wafer-level hermetic encapsulation for MEMS devices using low-temperature (300°C) Au-Sn bonding together with their pre- and postbonding characterization. Thermal evaporation method was used for metallization which is easy and controllable method for low thickness metallization. In this respect, the current study represents preliminary characterization result...Show More