Eugenio Gubia - IEEE Xplore Author Profile
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Eugenio Gubia

Also published under: E. Gubia, Eugenio GubÍa, Eugenio Gubía, E. Gubía

Publications
53
Citations
1,950
Publications by Year
20022024
Co-Authors:
Show All Co-Authors (53)
Image of author Eugenio Gubia

Eugenio Gubia

Also published under: E. Gubia, Eugenio GubÍa, Eugenio Gubía, E. Gubía

Affiliation

Electrical
Electronic and Communications Eng. Dept.
Institute of Smart Cities Public University of Navarre, Pamplona, Spain

Publication Topics

Biography

Eugenio Gubía received the M.Sc. and Ph.D. degrees in industrial engineering from the Public University of Navarre, Spain, in 1995 and 2003, respectively. He joined the Electrical and Electronic Department of the Public University of Navarre in 1996, where he is currently an associate professor. In 2002, he joined the Electrical Engineering, Power Electronics, and Renewable Energy Research Group. From June to December 2005, he worked as a guest researcher at the Center for Power Electronics Systems (CPES) in the field of electromagnetic compatibility. His research interests are in the field of power electronics, renewable energy systems, onboard systems, high-frequency phenomena in electrical machines, and electromagnetic compatibility.(Based on document published on 25 March 2010).
Publications
53
Citations
1,950
Publications by Year
20022024
Co-Authors:
Show All Co-Authors (53)
Author's Published Works

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A method for rapid screening of various low-k TDDB models

Fen Chen;Carole Graas;Michael Shinosky;Chad Burke;Kai D Feng;Craig Bocash;Ramachandran Muralidhar

2015 IEEE International Reliability Physics Symposium
Year: 2015 | Conference Paper |
Cited by: Papers (3)
Voltage or Field acceleration model is crucial for low-k TDDB reliability study and lifetime projection. Over the years, many different acceleration models have been proposed based on different physics. In this paper, a method for a relatively fast screen of various low-k TDDB models is proposed. Fast voltage ramp test to establish a relation of JE slope versus stress field is the first step. Stud...Show More

A method for rapid screening of various low-k TDDB models

Fen Chen;Carole Graas;Michael Shinosky;Chad Burke;Kai D Feng;Craig Bocash;Ramachandran Muralidhar

Year: 2015 | Conference Paper |

Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues

Fen Chen;Steve Mittl;Michael Shinosky;Ann Swift;Rick Kontra;Brent Anderson;John Aitken;Yanfeng Wang;Emily Kinser;Mahender Kumar;Yun Wang;Terence Kane;Kai D. Feng;William K Henson;Dan Mocuta;Di-an Li

2012 IEEE International Reliability Physics Symposium (IRPS)
Year: 2012 | Conference Paper |
The minimum insulator spacing between the polysilicon control gate (PC) and the diffusion contacts (CA) in advanced VLSI circuits is aggressively shrinking due to continuous technology scaling. Meanwhile, rapid adoptions of new materials such as metal gate, epitaxial SiGe source /drain, stress liner, and copper contact together with new device configurations such as raised source/drain and FinFET ...Show More

Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues

Fen Chen;Steve Mittl;Michael Shinosky;Ann Swift;Rick Kontra;Brent Anderson;John Aitken;Yanfeng Wang;Emily Kinser;Mahender Kumar;Yun Wang;Terence Kane;Kai D. Feng;William K Henson;Dan Mocuta;Di-an Li

Year: 2012 | Conference Paper |

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