Ernest Wu - IEEE Xplore Author Profile
Subscribe
ADVANCED SEARCH

Author details

< Back

Ernest Wu

Also published under: E. Y. Wu, E. Wu, Ernest Y. Wu, Ermest Y. Wu

Publications
115
Citations
1,918
Publications by Year
19952024
Co-Authors:
Show All Co-Authors (309)
Image of author Ernest Wu

Ernest Wu

Also published under: E. Y. Wu, E. Wu, Ernest Y. Wu, Ermest Y. Wu

Affiliation

IBM Research
Albany
NY, USA

Publication Topics

Biography

E. Y. Wu (M'90) photograph and biography not available at the time of publication.(Based on document published on 19 February 2003).
Publications
115
Citations
1,918
Publications by Year
19952024
Co-Authors:
Show All Co-Authors (309)
Author's Published Works

Showing 1-2 of 2 results

  • Sort

Filter Results

Show

Sort By

Results

A method for rapid screening of various low-k TDDB models

Fen Chen;Carole Graas;Michael Shinosky;Chad Burke;Kai D Feng;Craig Bocash;Ramachandran Muralidhar

2015 IEEE International Reliability Physics Symposium
Year: 2015 | Conference Paper |
Cited by: Papers (3)
Voltage or Field acceleration model is crucial for low-k TDDB reliability study and lifetime projection. Over the years, many different acceleration models have been proposed based on different physics. In this paper, a method for a relatively fast screen of various low-k TDDB models is proposed. Fast voltage ramp test to establish a relation of JE slope versus stress field is the first step. Stud...Show More

A method for rapid screening of various low-k TDDB models

Fen Chen;Carole Graas;Michael Shinosky;Chad Burke;Kai D Feng;Craig Bocash;Ramachandran Muralidhar

Year: 2015 | Conference Paper |

Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues

Fen Chen;Steve Mittl;Michael Shinosky;Ann Swift;Rick Kontra;Brent Anderson;John Aitken;Yanfeng Wang;Emily Kinser;Mahender Kumar;Yun Wang;Terence Kane;Kai D. Feng;William K Henson;Dan Mocuta;Di-an Li

2012 IEEE International Reliability Physics Symposium (IRPS)
Year: 2012 | Conference Paper |
The minimum insulator spacing between the polysilicon control gate (PC) and the diffusion contacts (CA) in advanced VLSI circuits is aggressively shrinking due to continuous technology scaling. Meanwhile, rapid adoptions of new materials such as metal gate, epitaxial SiGe source /drain, stress liner, and copper contact together with new device configurations such as raised source/drain and FinFET ...Show More

Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues

Fen Chen;Steve Mittl;Michael Shinosky;Ann Swift;Rick Kontra;Brent Anderson;John Aitken;Yanfeng Wang;Emily Kinser;Mahender Kumar;Yun Wang;Terence Kane;Kai D. Feng;William K Henson;Dan Mocuta;Di-an Li

Year: 2012 | Conference Paper |

IEEE Account

Purchase Details

Profile Information

Need Help?

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.