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Integration of Oxidized Silicon- and Hydrogen- Terminated Diamond p-Channels for Normally-Off High-Voltage Diamond Power Devices
Yu Fu;Zeyang Ren;Kai Su;Jinfeng Zhang;Ruowei Liu;Yijiang Li;Liaoliang Zhu;Jintao Meng;Peng Qian;Dong Wang;Yue Hao;Hiroshi Kawarada;Jincheng Zhang
With a dense two-dimensional hole gas (2DHG) p-type conductive layer near the surface, hydrogen- terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown typical normally-on operations and high breakdown voltages ( {V}_{\text {BR}} ). Owing to the high MOS interface quality, the oxidized silicon-terminated (C-Si–O) diamond MOSFETs have featured excellent n...Show More
Boron-Doped Diamond MOSFETs With Gradual Channel Doping Density
Zihui Zhu;Zeyang Ren;Yijiang Li;Jinfeng Zhang;Jincheng Zhang;Kai Su;Liaoliang Zhu;Jintao Meng;Junfei Chen;Yue Hao
The growth of gradual boron-doped diamond epitaxial layer was achieved by microwave plasma chemical vapor deposition (MPCVD). Secondary ion mass spectrometry (SIMS) results show that the effective doping concentration range is from 1015 cm−3 to 1019 cm−3, and the doping layer thickness is about 45 nm. Boron-doped diamond Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) was prepared by us...Show More
Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET
Qi He;Jinfeng Zhang;Zihui Zhu;Zeyang Ren;Xinxin Yu;Jincheng Zhang;Kai Su;Yijiang Li;Qihui Xu;Junpeng Li;Yue Hao
Hydrogenated silicon-doped (Si-doped) diamond was prepared by magnetron sputtering silicon on IIa CVD diamond surface and following Si etch/diffuse process at 1000 °C in a hydrogen atmosphere in MPCVD. The silicon doping concentration was higher than $1\times 10^{{18}}$ cm−3 among the depth of 25 nm. The hydrogenated Si-doped diamond surface demonstrated the simultaneous presence of C–H and C–Si...Show More
High Conductivity Hydrogenated Boron and Silicon Co-Doped Diamond With 0.46 Ω·mm Ohmic Contact Resistance
Jinfeng Zhang;Qi He;Zeyang Ren;Xinxin Yu;Kai Su;Yijiang Li;Qihui Xu;Jincheng Zhang;Yue Hao
IEEE Electron Device Letters
Cited by: Papers (1)
We report on achieving high conductivity hydrogenated boron (B) and silicon (Si) co-doped diamond with a room-temperature Hall result of a square resistance of 2724 ohm/sq, a sheet hole density of ${3}.{3}\times {10} ^{{13}}$ cm−2, and a hole mobility of 68.9 cm2/Vs. The co-doping of B and Si is realized in such a way. First, etch solid BN disk by hydrogen plasma in microwave plasma chemical vap...Show More
Natural interactive control method for unmanned swarm systems based on gesture recognition
Yijiang Li;Yaonan Wang;Yang Mo;Qing Zhu;Zhiqiang Miao;Yuefan Luo
2022 IEEE International Conference on Robotics and Biomimetics (ROBIO)
Year: 2022 | Conference Paper |
Interactive control is very important for unmanned swarm systems to understand human intentions and execute tasks. However, traditional interactive control usually uses a keyboard, mouse, or remote controller, which is not intuitive and convenient enough. This paper proposes a natural interaction control method based on gesture recognition for unmanned swarm systems. First, considering the real-ti...Show More
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