We investigate the electrical reliability of inverted staggered low-temperature poly-Si (LTPS) thin-film transistors (TFT) under direct and alternate current (DC and AC gate pulses) operations fabricated by blue laser diode annealing (BLDA). From scanning electron microscopy (SEM), and atomic force microscopy (AFM) images, smaller grain sizes (~70 nm) and smoother poly-Si surface (~1.18 nm) are ac...Show More
We report solid-phase crystallization (SPC) of amorphous silicon (a-Si) using blue laser annealing (BLA) and its application to thin film transistor (TFT). The a-Si film on glass was crystallized by exposure of blue laser for short duration of $50~\mu \text{s}$ . The temperature of Si increases up to ~1100 °C and induces fast SPC. A 100 nm poly-Si on glass has full width at half maximum of Raman ...Show More
We report sub-micron channel length (0.5 μm), low-temperature polysilicon(LTPS) thin-film transistor (TFT) using blue laser annealing (BLA) for ultra-high-resolution displays. The TFTs exhibited negligible kink effect in output characteristics with excellent negative bias temperature stability. Protrusion-free BLA LTPS is evident from the transmission electron microscopy (TEM) image. Technology co...Show More
