Mengyuan Huang - IEEE Xplore Author Profile
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Mengyuan Huang

Publications
13
Citations
83
Publications by Year
20142023
Co-Authors:
Show All Co-Authors (74)
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Mengyuan Huang

Affiliation

Silicon Photonic Product Division
Intel Corporation
Santa Clara, CA, USA

Publication Topics

Biography

Mengyuan Huang (M’15) received the M.S. degree in electrical and computer engineering from Duke University in 2009. He joined SiFotonics Technologies in 2010. He is currently a Senior Technical Manager at SiFotonics Technologies on Ge/Si APD-related projects. He has coauthored more than 20 publications and been granted 11 U.S. patents about Ge/Si devices.(Based on document published on 7 September 2017).
Publications
13
Citations
83
Publications by Year
20142023
Co-Authors:
Show All Co-Authors (74)
Author's Published Works

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200Gb/s per lane Ge/Si waveguide avalanche photodiode

Mengyuan Huang;Kiyoung Lee;Kelly Magruder;Olufemi Dosunmu;Ryan Haislmaier;Hao-Hsiang Liao;Wei Qian;Paul Martin;Jeremy Hicks;Pari Patel;Carsten Brandt;Ansheng Liu

2022 European Conference on Optical Communication (ECOC)
Year: 2022 | Conference Paper |
Cited by: Papers (2)
We demonstrate a waveguide-integrated Ge/Si APD with 3dB bandwidth of 52.2GHz at gain of 3.8 and 45.8GHz at gain of 6. This device also shows a large dynamic range with responsivity changes 1.6-3.5A/W. This high-performance device is suitable for various 200Gb/s per lane applications.Show More

200Gb/s per lane Ge/Si waveguide avalanche photodiode

Mengyuan Huang;Kiyoung Lee;Kelly Magruder;Olufemi Dosunmu;Ryan Haislmaier;Hao-Hsiang Liao;Wei Qian;Paul Martin;Jeremy Hicks;Pari Patel;Carsten Brandt;Ansheng Liu

Year: 2022 | Conference Paper |

56GHz Waveguide Ge/Si Avalanche Photodiode

Mengyuan Huang;Pengfei Cai;Su Li;Guanghui Hou;Naichuan Zhang;Tzung-I Su;Ching-yin Hong;Dong Pan

2018 Optical Fiber Communications Conference and Exposition (OFC)
Year: 2018 | Conference Paper |
Cited by: Papers (4)
We report a waveguide Ge/Si APD with ultra-high 3dB-bandwidths: 56GHz with a 1310nm responsivity of 1.08A/W and 36GHz with a 1310nm responsivity of 6A/W, which, to our knowledge, are the best performance among all reported APD devices.Show More

56GHz Waveguide Ge/Si Avalanche Photodiode

Mengyuan Huang;Pengfei Cai;Su Li;Guanghui Hou;Naichuan Zhang;Tzung-I Su;Ching-yin Hong;Dong Pan

Year: 2018 | Conference Paper |

Germanium on Silicon Avalanche Photodiode

Mengyuan Huang;Su Li;Pengfei Cai;Guanghui Hou;Tzung-I Su;Wang Chen;Ching-yin Hong;Dong Pan

IEEE Journal of Selected Topics in Quantum Electronics
Year: 2018 | Volume: 24, Issue: 2 | Journal Article |
Cited by: Papers (52)
Silicon photonics is considered as one of the promising technologies for high-speed optical fiber communications. Among various silicon photonic devices, germanium on silicon avalanche photodiodes (Ge/Si APDs) have attracted tremendous attention due to their the properties of high performance and low cost. The sensitivity of 10Gb/s APD reached -29.5dBm at 1550 nm with the bit error rate of 1 × 10-...Show More

Germanium on Silicon Avalanche Photodiode

Mengyuan Huang;Su Li;Pengfei Cai;Guanghui Hou;Tzung-I Su;Wang Chen;Ching-yin Hong;Dong Pan

Year: 2018 | Volume: 24, Issue: 2 | Journal Article |

First demonstration of PAM4 transmissions for record reach and high-capacity SWDM links over MMF using 40G/100G PAM4 IC chipset with real-time DSP

Frank Chang;Yi Sun;Robert Lingle;You Zhang;Pengfei Cai;Mengyuan Huang;Dong Pan;Timo Gray;Sudeep Bhoja;Stephen Nelson;Jim Tatum

2017 Optical Fiber Communications Conference and Exhibition (OFC)
Year: 2017 | Conference Paper |
Cited by: Papers (1)
We experimentally demonstrate, for the first time, link BERs under the KP4 FEC threshold at 42.5 Gbps over 550 m high bandwidth OM4 using single 850 nm VCSEL and at aggregated 212.5 Gbps over 300 m wideband multimode fiber using SWDM TOSAs from 850 to 940 nm, employing a newly developed PAM4 chipset and direct detection, with a novel Ge/Si APD or wideband PIN ROSA.Show More

First demonstration of PAM4 transmissions for record reach and high-capacity SWDM links over MMF using 40G/100G PAM4 IC chipset with real-time DSP

Frank Chang;Yi Sun;Robert Lingle;You Zhang;Pengfei Cai;Mengyuan Huang;Dong Pan;Timo Gray;Sudeep Bhoja;Stephen Nelson;Jim Tatum

Year: 2017 | Conference Paper |

Cost-effective 25G APD TO-can/ROSA for 100G applications

Mengyuan Huang;Pengfei Cai;Su Li;Tzung-I Su;Liangbo Wang;Wang Chen;Ching-yin Hong;Dong Pan

2017 Optical Fiber Communications Conference and Exhibition (OFC)
Year: 2017 | Conference Paper |
Owing to the breakthrough of Ge/Si avalanche photodiode, we developed a cost effective 25G APD TO-can solution for various 100G applications including 100G-PON, 5G wireless, and data center applications with PAM4 and DMT modulations.Show More

Cost-effective 25G APD TO-can/ROSA for 100G applications

Mengyuan Huang;Pengfei Cai;Su Li;Tzung-I Su;Liangbo Wang;Wang Chen;Ching-yin Hong;Dong Pan

Year: 2017 | Conference Paper |

Breakthrough of 25Gb/s germanium on silicon avalanche photodiode

Mengyuan Huang;Pengfei Cai;Su Li;Liangbo Wang;Tzung-I Su;Liyuan Zhao;Wang Chen;Ching-yin Hong;Dong Pan

2016 Optical Fiber Communications Conference and Exhibition (OFC)
Year: 2016 | Conference Paper |
Cited by: Papers (1)
Our germanium on silicon avalanche photodiodes (Ge/Si APDs) show a 1310nm sensitivity of -22.5dBm at 25.78Gb/s, which is, to our knowledge, the best sensitivity in reported 25Gb/s avalanche photodiodes.Show More

Breakthrough of 25Gb/s germanium on silicon avalanche photodiode

Mengyuan Huang;Pengfei Cai;Su Li;Liangbo Wang;Tzung-I Su;Liyuan Zhao;Wang Chen;Ching-yin Hong;Dong Pan

Year: 2016 | Conference Paper |

High performance Ge/Si avalanche photodiode

Mengyuan Huang;Pengfei Cai;Liangbo Wang;Su Li;Wang Chen;Ching-yin Hong;Nai Zhang;Dong Pan

2015 IEEE Photonics Conference (IPC)
Year: 2015 | Conference Paper |
Cited by: Papers (1)
We review our recent development of germanium on silicon avalanche photodiodes (Ge/Si APDs). Our Ge/Si APDs, manufactured by a standard CMOS commercial foundry, satisfy the requirements of various optical communication systems from 10Gb/s to 25Gb/s.Show More

High performance Ge/Si avalanche photodiode

Mengyuan Huang;Pengfei Cai;Liangbo Wang;Su Li;Wang Chen;Ching-yin Hong;Nai Zhang;Dong Pan

Year: 2015 | Conference Paper |

Reliability and non-hermetic properties of Ge/Si optoelectronic devices

Su Li;Liangbo Wang;Tuo Shi;Pengfei Cai;Mengyuan Huang;Wang Chen;Ching-yin Hong;Dong Pan

2015 Optical Fiber Communications Conference and Exhibition (OFC)
Year: 2015 | Conference Paper |
Our CMOS-foundry mass-produced Ge/Si optoelectronic devices have passed the high temperature accelerated aging test, THB test and HAST test, which demonstrate satisfactory reliability and promising potential for non-hermetic applications.Show More

Reliability and non-hermetic properties of Ge/Si optoelectronic devices

Su Li;Liangbo Wang;Tuo Shi;Pengfei Cai;Mengyuan Huang;Wang Chen;Ching-yin Hong;Dong Pan

Year: 2015 | Conference Paper |

25Gb/s normal incident Ge/Si avalanche photodiode

Mengyuan Huang;Tuo Shi;Pengfei Cai;Liangbo Wang;Su Li;Wang Chen;Ching-yin Hong;Dong Pan

2014 The European Conference on Optical Communication (ECOC)
Year: 2014 | Conference Paper |
Cited by: Papers (11)
We developed world first 25Gb/s normal incident germanium silicon avalanche photodiode (Ge/Si APD) in a CMOS commercial foundry. The vertically illuminated Ge/Si APDs have a large 3-dB bandwidth (>18GHz) at a high gain (M=8) which is suitable for 100GBASE-ER4 application.Show More

25Gb/s normal incident Ge/Si avalanche photodiode

Mengyuan Huang;Tuo Shi;Pengfei Cai;Liangbo Wang;Su Li;Wang Chen;Ching-yin Hong;Dong Pan

Year: 2014 | Conference Paper |

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