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3326-V Modulation-Doped Diamond MOSFETs | IEEE Journals & Magazine | IEEE Xplore

3326-V Modulation-Doped Diamond MOSFETs


Abstract:

This letter reports the fabrication and characterization of 3.3-kV modulation-doped diamond metal–oxide–semiconductor field-effect transistors (MOSFETs). The modulation d...Show More

Abstract:

This letter reports the fabrication and characterization of 3.3-kV modulation-doped diamond metal–oxide–semiconductor field-effect transistors (MOSFETs). The modulation doping was performed via NO2 delta doping in the Al2O3 gate layer. The modulation-doped diamond MOSFET with a gate length of 2.8~\mu \text{m} showed a maximum drain current density of 0.42 A/mm, with an estimated specific ON-resistance of {13.48}~\text {m}\Omega \cdot \text {cm}^{{2}} . Therefore, the Baliga’s figure-of-merit (BFOM) was determined to be 820.6 MW/cm2. A subthreshold swing of 109.89 mV/dec, indicative of a high-quality Al2O3/diamond interface with an interfacial state density of {1.49} \times {10}^{{12}} cm−2eV−1, was obtained. The maximum effective mobility was estimated to be 496 cm2/Vs near the threshold, and a maximum output power density of 46.5 W/mm was projected.
Published in: IEEE Electron Device Letters ( Volume: 43, Issue: 8, August 2022)
Page(s): 1303 - 1306
Date of Publication: 08 June 2022

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