Abstract:
As the feature size of advanced integrated circuits keeps shrinking, resolution enhancement techniques (RETs) are utilized to improve the printability in the lithography ...Show MoreMetadata
Abstract:
As the feature size of advanced integrated circuits keeps shrinking, resolution enhancement techniques (RETs) are utilized to improve the printability in the lithography process. Optical proximity correction (OPC) is one of the most widely used RETs aiming at compensating the mask to generate a more precise wafer image. In this article, we put forward a level-set-based OPC approach with high mask optimization quality and fast convergence. In order to suppress the disturbance of the condition fluctuation in the lithography process, we propose a new process window-aware cost function. Then, a novel momentum-based evolution technique is adopted, which demonstrates substantial improvement. We also propose a self-adaptive conjugate gradient method that promises a higher optimization stability and less consuming time. Moreover, the graphics processing unit (GPU) is leveraged for accelerating the proposed algorithm. We take the output masks from a machine learning-based mask optimization flow as the input and work as the postprocess to refine the quasi-optimized masks. Experimental results on ICCAD 2013 benchmarks show that our algorithm outperforms all previous OPC algorithms in both solution quality and runtime overhead.
Published in: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ( Volume: 42, Issue: 2, February 2023)