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Atomic Defects Profiling and Reliability of Amorphous Al2O3 Metal–Insulator–Metal Stacks | IEEE Journals & Magazine | IEEE Xplore

Atomic Defects Profiling and Reliability of Amorphous Al2O3 Metal–Insulator–Metal Stacks


Abstract:

We present a comprehensive characterization of amorphous alumina (a-Al2O3) high- {k} dielectric in metal–insulator–metal (MIM) stacks, self-consistently extracting the...Show More

Abstract:

We present a comprehensive characterization of amorphous alumina (a-Al2O3) high- {k} dielectric in metal–insulator–metal (MIM) stacks, self-consistently extracting the space-energy distribution of a-Al2O3 atomic defects and the related bond-breaking process parameters. Active defects are profiled via simultaneous simulation of current–voltage ( {I}\textit {V} ), capacitance–voltage (CV), conductance–voltage (GV) (i.e., defect spectroscopy), and low-field {I}{V} hysteresis analysis. The defect energies extracted ( {E}_{TH}= 1.55 and 3.55 eV) are consistent with oxygen vacancies and aluminum interstitials. The voltage-dependent dielectric breakdown (VDDB) statistics of a-Al2O3 is investigated using ramped voltage stress (RVS). The VDDB statistics show a complex and polarity-dependent breakdown statistics, correlating with defect distributions, which allows estimating the a-Al2O3 bond-breaking parameters with the support of multiscale atomistic simulations of the breakdown process.
Published in: IEEE Transactions on Electron Devices ( Volume: 69, Issue: 7, July 2022)
Page(s): 3884 - 3891
Date of Publication: 13 May 2022

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