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High Q, Compact Photonic Crystal Nanobeam Cavity for an Active Device Platform in a CMOS Silicon Photonics Process | IEEE Conference Publication | IEEE Xplore

High Q, Compact Photonic Crystal Nanobeam Cavity for an Active Device Platform in a CMOS Silicon Photonics Process


Abstract:

We demonstrate a high Q, compact photonic crystal nanobeam cavity in the new 45 nm GlobalFoundries 45CLO monolithic electronics-photonics platform optimized for silicon p...Show More

Abstract:

We demonstrate a high Q, compact photonic crystal nanobeam cavity in the new 45 nm GlobalFoundries 45CLO monolithic electronics-photonics platform optimized for silicon photonics - with an intrinsic Q of 134,000, FSR of 24.17 nm, and a theoretical Q/V of 2.2×105(λ/n)-3.
Date of Conference: 07-10 December 2021
Date Added to IEEE Xplore: 18 January 2022
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Conference Location: Malaga, Spain

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