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Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs | IEEE Journals & Magazine | IEEE Xplore

Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs


Abstract:

In0.53Ga0.47As based gate-all-around (GAA) MOSFETs are very promising for high frequency applications because they deliver higher current and transconductance compared to...Show More

Abstract:

In0.53Ga0.47As based gate-all-around (GAA) MOSFETs are very promising for high frequency applications because they deliver higher current and transconductance compared to their Si counterparts. In ultra-short GAA nanowire (NW) and nanosheet (NS) MOSFETs, heat accumulation in the channel region has become a serious issue as it raises the average lattice temperature several degrees above the ambient temperature ( \text{T}_{\text A} ). The increment in the average lattice temperature, also known as self-heating, degrades current driving capability and the linearity behaviour of the devices. In this work, the impact of self-heating on the linearity performance of In0.53Ga0.47As based GAA NW and NS MOSFETs has been investigated with the assistance of thermally calibrated TCAD simulation results. The effects of structural parameters of NW and NS MOSFETs, like gate oxide thickness (TOX), the diameter of nanowire (d), the width of nanosheet (W), and the number of nanowires/nanosheets (N) on linearity performance have been extensively studied using the linearity figure of merits, such as VIP3, and IIP3. Moreover, the impact of self-heating mitigating techniques on the linearity performance of devices has also been explored in this work.
Published in: IEEE Transactions on Device and Materials Reliability ( Volume: 22, Issue: 1, March 2022)
Page(s): 42 - 49
Date of Publication: 16 December 2021

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