Abstract:
Polymer memristors with good flexibility are promising electronic devices for edge computing paradigms in wearable electronics. However, most reported works present nonvo...Show MoreMetadata
Abstract:
Polymer memristors with good flexibility are promising electronic devices for edge computing paradigms in wearable electronics. However, most reported works present nonvolatile devices, which are suitable for applications in resistive random-access memory or artificial synapse. The volatile devices, which are indispensable in artificial neuron circuits, have rarely been reported, as the resistive switching property of organic devices is usually unstable in volatile devices. Moreover, most reported works use polymers in a way that is not compatible with traditional memristor fabrication technology, which limits the further applications of polymer memristors to large-scale neuromorphic circuits. In this letter, an Ag/Nafion/Au threshold switching memristor was fabricated via electrohydrodynamic printing technology and employed as a core of a leaky integrate and fire neuron circuit. The threshold switching memristor shows excel device size, good endurance, good device-to-device and cycle-to-cycle uniformity, flexibility, and stability at high temperatures. The combination of electrohydrodynamic printing technology and polymer memristor is promising in fast memristor production and largescale edge-computation network circuits.
Published in: IEEE Electron Device Letters ( Volume: 43, Issue: 1, January 2022)
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