Highly Asymmetric Epitaxial Designs for Increased Power and Efficiency in kW-Class GaAs-Based Diode Laser Bars | IEEE Conference Publication | IEEE Xplore
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Highly Asymmetric Epitaxial Designs for Increased Power and Efficiency in kW-Class GaAs-Based Diode Laser Bars

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Md. Jarez Miah; Anisuzzaman Boni; Dominik Martin; Pietro Della Casa; Paul Crump
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Abstract:

1-cm single quantum well laser bars at 910-940nm wavelengths are presented, using extremely asymmetric layer designs for increased power. In quasi-CW testing, bars with 4...Show More

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Abstract:

1-cm single quantum well laser bars at 910-940nm wavelengths are presented, using extremely asymmetric layer designs for increased power. In quasi-CW testing, bars with 4mm resonators provide output power >1.8kW with 67% maximum efficiency at 298K and >2.2kW with 74% maximum efficiency at 203K.
Published in: 2021 27th International Semiconductor Laser Conference (ISLC)
Date of Conference: 10-14 October 2021
Date Added to IEEE Xplore: 26 November 2021
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DOI: 10.1109/ISLC51662.2021.9615832
Conference Location: Potsdam, Germany
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