Mg-Te OTS selector with Low Ioff ( < 100 pA), Fast Switching Speed (τd = 7 ns), and High Thermal Stability (400 °C / 30min) for X-point Memory Applications

We report on nanoscale (d = 45 nm), binary Mg-Te based ovonic threshold switching (OTS) selector with low leakage current (Ioff = 88 pA), high threshold voltage (Vth = 2.4V/10 nm), fast switching speed (τd = 7 ns) and high thermal stability (400 °C/30 min). We found that OTS selector parameters (Ioff and Vth) are closely related to the activation energy (Ea) of the Poole-Frenkel conduction model which can be controlled by varying the composition ratio of Mg and Te. The best OTS device characteristics such as large Ea (~ 0.7 eV), lowest Ioff and highest Vth can be obtained by adopting the optimum composition of Mg0.5Te0.5.