Loading web-font TeX/Main/Regular
Towards <span class="MathJax_Preview" style="">5\mu \mathrm{m}</span><script type="math/tex" id="MathJax-Element-1">5\mu \mathrm{m}</script> interconnection pitch with Die-to-Wafer direct hybrid bonding | IEEE Conference Publication | IEEE Xplore

Towards 5\mu \mathrm{m} interconnection pitch with Die-to-Wafer direct hybrid bonding


Abstract:

Die-to-wafer direct hybrid bonding process is foreseen as a key enabler of heterogeneous 3D integration. Hybrid bonding technologies were first developed on W2W assembly ...Show More

Abstract:

Die-to-wafer direct hybrid bonding process is foreseen as a key enabler of heterogeneous 3D integration. Hybrid bonding technologies were first developed on W2W assembly reaching 3D interconnection pitch of 1\mu\mathrm{m}. Recently, CEA-Leti demonstrated the feasibility of DTW direct hybrid bonding at 10\mu\mathrm{m} with a specific die bonder (NEO HB) developed by SET Corporation. In this paper, the last improvements of DTW hybrid bonding process flow and die bonder alignment capability are presented. Main results showed an alignment capability improved to <\!1\mu\mathrm{m} which enables bonding of die with <\!5\mu\mathrm{m} interconnection pitch. Finally, multi-interconnection pitch bondings on a wafer were achieved with Cu pitches varying from 5\mu\mathrm{m} to 10\mu \mathrm{m}.
Date of Conference: 01 June 2021 - 04 July 2021
Date Added to IEEE Xplore: 10 August 2021
ISBN Information:

ISSN Information:

Conference Location: San Diego, CA, USA

Funding Agency:


References

References is not available for this document.