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Broadband 110 - 170 GHz True Time Delay Circuit in a 130-nm SiGe BiCMOS Technology | IEEE Conference Publication | IEEE Xplore

Broadband 110 - 170 GHz True Time Delay Circuit in a 130-nm SiGe BiCMOS Technology


Abstract:

This paper presents a fully integrated D-band true time delay (TTD) circuit designed in 0.13µm silicon-germanium (SiGe) BiCMOS technology. It provides a relative time del...Show More

Abstract:

This paper presents a fully integrated D-band true time delay (TTD) circuit designed in 0.13µm silicon-germanium (SiGe) BiCMOS technology. It provides a relative time delay of 0.446 ps to 6.64 ps from 110 to 170 GHz with the resolution of 0.446 ps equivalent to the accuracy of a 4-bit phase shifter. The presented true time delay IC occupies 2.2 mm x 0.53 mm and draws a current of 6.92 mA from 3.3 V. To our knowledge, it is the first true time delay circuit above 100 GHz in silicon technology with a record 3-dB bandwidth of 60 GHz.
Date of Conference: 04-06 August 2020
Date Added to IEEE Xplore: 14 October 2020
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Conference Location: Los Angeles, CA, USA

References

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