Abstract:
This paper describes the design structure of the nanowire tunnel field effect transistor (NW-TFET). The device simulation carried on nanohub device simulation tool. The p...Show MoreMetadata
Abstract:
This paper describes the design structure of the nanowire tunnel field effect transistor (NW-TFET). The device simulation carried on nanohub device simulation tool. The parameters such as energy gap and drain current are analyzed for different values of drain voltage, channel length and channel thickness furthermore the drain current analysis are done for various dielectric values and observed that dielectric values are not having impact with NW-TFET.
Published in: 2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)
Date of Conference: 02-04 July 2020
Date Added to IEEE Xplore: 16 September 2020
ISBN Information: