Abstract:
This article reports the first comprehensive analysis of the reliability of hydrogen-terminated diamond metal semiconductor field-effect transistors (MESFETs) submitted t...Show MoreMetadata
Abstract:
This article reports the first comprehensive analysis of the reliability of hydrogen-terminated diamond metal semiconductor field-effect transistors (MESFETs) submitted to OFF-state stress. We demonstrate that stress induces an increase in ON-resistance and a shift in the threshold voltage, along with a decrease in the transconductance peak value. These effects are ascribed to the generation of defects at the diamond surface and/or in the upper semiconductor layers. The defects are generated both in the access regions and under the gate, and their activation energy is 0.30 eV.
Published in: IEEE Transactions on Electron Devices ( Volume: 67, Issue: 10, October 2020)
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- IEEE Keywords
- Index Terms
- Causal Effect ,
- Hydrogen-terminated Diamond ,
- Activation Energy ,
- Gene Defects ,
- Threshold Voltage ,
- Accessible Regions ,
- Metal Semiconductor ,
- Threshold Voltage Shift ,
- Diamond Surface ,
- Increase In Concentration ,
- Effects Of Stress ,
- Thermal Conductivity ,
- Performance Variables ,
- Voltage-gated ,
- Chemical Vapor Deposition ,
- Deeper Level ,
- Transfer Characteristics ,
- Device Structure ,
- Causes Of Variation ,
- Silicon Carbide ,
- Defect Concentration ,
- Gallium Nitride ,
- Transient Current ,
- Charge Trapping ,
- Atomic Layer Deposition ,
- Drain Voltage ,
- Gate Stack ,
- Gate Current ,
- Bias Conditions ,
- Stress Test
- Author Keywords
Contents Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Causal Effect ,
- Hydrogen-terminated Diamond ,
- Activation Energy ,
- Gene Defects ,
- Threshold Voltage ,
- Accessible Regions ,
- Metal Semiconductor ,
- Threshold Voltage Shift ,
- Diamond Surface ,
- Increase In Concentration ,
- Effects Of Stress ,
- Thermal Conductivity ,
- Performance Variables ,
- Voltage-gated ,
- Chemical Vapor Deposition ,
- Deeper Level ,
- Transfer Characteristics ,
- Device Structure ,
- Causes Of Variation ,
- Silicon Carbide ,
- Defect Concentration ,
- Gallium Nitride ,
- Transient Current ,
- Charge Trapping ,
- Atomic Layer Deposition ,
- Drain Voltage ,
- Gate Stack ,
- Gate Current ,
- Bias Conditions ,
- Stress Test
- Author Keywords
