MOSFETs’ Electrical Performance in the 160-nm BCD Technology Process With the Diamond Layout Shape

This article introduces an innovativeapproach that describes the drain-source current improvements of MOS transistors. It is based on the geometrical modification of MOSFET's channel from a rectangular layout shape (RLS) into a diamond layout shape (DLS). In this way, the drain-source current enhancement is increased up to 11% for the DLS MOS transistors with an effective aspect ratio (W/L)eff equal to 2.0 and an angle α set to 80°. Moreover, we present the comparison of 3-D TCAD simulations data, analytical model data based on Schwarz-Christoffel transformation (SCT), and measurement data given by measurement of the MOS transistors fabricated in the BipolarCMOS-DMOS (BCD) 160-nm technology process. For this purpose, there have been fabricated 1124 samples, which were proportionally divided into RLS MOSFETs and DLS MOSFETs with the angles α equal to 120°, 100°, and 80°. For all studied aspect ratios, the presented model has an excellent analytic description in comparison with the 3-D TCAD simulation results with an error lower than 3%. So, it proves the quality of the analytical model based on the SCT approach and it is the recommended approach to use also for modeling other MOSFET gate layout shapes.