Abstract:
Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable nonvolatile memory technology which utilizes the large resistivity contras...Show MoreMetadata
Abstract:
Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable nonvolatile memory technology which utilizes the large resistivity contrast between the amorphous and crystalline phases of chalcogenide materials such as Ge2Sb2Te5, (GST). In addition to being used as a standalone memory, there has been a growing interest in integration of PCM devices on top of the CMOS layer for computation in memory and neuromorphic computing. The large CMOS overhead for memory controllers is a limiting factor for this purpose. Transferring functionality like routing, multiplexing, and logic to the memory layer can substantially reduce the CMOS overhead, making it possible to integrate 100s of GB of PCM storage on top of a conventional CPU [1], [2].
Published in: 2019 Device Research Conference (DRC)
Date of Conference: 23-26 June 2019
Date Added to IEEE Xplore: 26 March 2020
ISBN Information: