Abstract:
A monolithic resistorless circuit has been designed for active reset of the N+P single-ended (common anode) single-photon avalanche diode (SPAD). This type of SPAD has en...Show MoreMetadata
Abstract:
A monolithic resistorless circuit has been designed for active reset of the N+P single-ended (common anode) single-photon avalanche diode (SPAD). This type of SPAD has enhanced the photon detection efficiency in the near-infrared (NIR) region relatively to the P+N (two-ended) SPAD. Due to this fact, the N+P SPAD is a better candidate for the light detection and range (LiDAR) working in the NIR region. The circuit is fabricated in a standard 0.18-μm CMOS image sensor process. The dead time after each photon detection is adjustable; the minimum measured value is 4 ns. The maximum photon count rate corresponding to this dead time is 2.5·108 photons/s. This circuit guarantees precise repeatable response, short and well-controlled dead time, and after-pulsing effect reduction. All these are essential for many SPAD applications and crucial for increasing the saturation level of the silicon photo multiplier (SiPM)based LiDAR systems working in strong background light conditions on sunny day.
Published in: IEEE Transactions on Electron Devices ( Volume: 66, Issue: 12, December 2019)
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- IEEE Keywords
- Photonics ,
- Laser radar ,
- Silicon ,
- MOSFET ,
- Doping
- Index Terms
- Light Detection And Ranging ,
- Single-photon Avalanche Diode ,
- Photon Counting ,
- Near-infrared Region ,
- Dead Time ,
- Sunny Days ,
- Photon Detection ,
- Avalanche Diode ,
- Silicon Photomultiplier ,
- Impedance ,
- High Voltage ,
- Low Voltage ,
- Pulse Duration ,
- DC Power ,
- Design Considerations ,
- Figure Of Merit ,
- Types Of Pain ,
- Parasitic Capacitance ,
- Pulse Shape ,
- Test Chip ,
- Dark Count Rate ,
- Silicon Surface ,
- Field Ionization ,
- Small Input
- Author Keywords
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Photonics ,
- Laser radar ,
- Silicon ,
- MOSFET ,
- Doping
- Index Terms
- Light Detection And Ranging ,
- Single-photon Avalanche Diode ,
- Photon Counting ,
- Near-infrared Region ,
- Dead Time ,
- Sunny Days ,
- Photon Detection ,
- Avalanche Diode ,
- Silicon Photomultiplier ,
- Impedance ,
- High Voltage ,
- Low Voltage ,
- Pulse Duration ,
- DC Power ,
- Design Considerations ,
- Figure Of Merit ,
- Types Of Pain ,
- Parasitic Capacitance ,
- Pulse Shape ,
- Test Chip ,
- Dark Count Rate ,
- Silicon Surface ,
- Field Ionization ,
- Small Input
- Author Keywords