Silicon Nitride/Silicon Dioxide Echelle Grating Spectrometer for Operation Near 1.55 μm | IEEE Journals & Magazine | IEEE Xplore

Silicon Nitride/Silicon Dioxide Echelle Grating Spectrometer for Operation Near 1.55 μm


Impact Statement:A high performance echelle grating on a low loss silicon nitride platform with silver as a reflector is implemented. Our results demonstrate the highest performance echel...Show More

Abstract:

Here we use an electron beam lithography system to pattern an Si3N4/SiO2 echelle grating using silver as a reflector on the grating grooves. The grating in this letter ac...Show More
Impact Statement:
A high performance echelle grating on a low loss silicon nitride platform with silver as a reflector is implemented. Our results demonstrate the highest performance echelle grating achieved so far: ultra-low on-chip loss (1.39 dB), high channel uniformity (1.2 dB), and large suppression of channel crosstalk (30 dB). Our approach is also applicable to broadband spectroscopy. A clear relationship between stitching error and crosstalk for e-beam fabricated echelle grating is demonstrated.

Abstract:

Here we use an electron beam lithography system to pattern an Si3N4/SiO2 echelle grating using silver as a reflector on the grating grooves. The grating in this letter achieves 1.39 dB on-chip loss, a spectral resolution of ~1300, a 1.2 dB channel nonuniformity, and less than -30 dB adjacent channel crosstalk for the transverse electric field polarization. We establish that stitching errors can lead to appreciable adjacent channel crosstalk if proper precaution is not taken to minimize them.
Published in: IEEE Photonics Journal ( Volume: 10, Issue: 6, December 2018)
Article Sequence Number: 4502207
Date of Publication: 16 November 2018

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