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8LPP Logic Platform Technology for Cost-Effective High Volume Manufacturing | IEEE Conference Publication | IEEE Xplore

8LPP Logic Platform Technology for Cost-Effective High Volume Manufacturing


Abstract:

8LPP logic platform technology supports mobile and high-performance and lower power application especially for mobile, artificial intelligence (AI), and cryptocurrency de...Show More

Abstract:

8LPP logic platform technology supports mobile and high-performance and lower power application especially for mobile, artificial intelligence (AI), and cryptocurrency devices. 8LPP is employing the evolutionary generation of bulk FinFET FEOL and 44nm EUV-less multi-patterning BEOL process, resulting in 7% power reduction and ~15% area scaling compared with the previous 10LPP. The cost-effective high volume manufacturing is achieved with the minimum additional critical layers and the comparable process steps over the current high volume 10nm production.
Date of Conference: 18-22 June 2018
Date Added to IEEE Xplore: 28 October 2018
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Conference Location: Honolulu, HI, USA
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Introduction

FinFET-based logic process technologies have been successfully used for logic platform architecture thanks to superior scalability, low power and high performance benefits [1]. Recently, the further scaling below 10nm meets a lot of challenges for multi-patterning complexity before EUV solution. In order to support cost-effective high-volume production, 8LPP is introduced to maximize the merit of well-established 10LPP production line. 44nm pitch 1x BEOL usage showed 15% area reduction by uHD cell [2]. When combining this extended multi-patterning BEOL and the further scaled FEOL process, 8LPP logic platform strongly satisfy the increasing market needs for the cost-effective, high performance, and lower power consumption. 8LPP also can fill the technology gap between the next cutting-edge technology node with high-cost production and the current 10nm line. We provide most competitive device performance and its ultra-lower operation voltage characteristics down to 0.35V, required for newly growing IOT and cyptocurrency application.

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