Design of a 250 kW, 1200 V SiC MOSFET-based three-phase inverter by considering a subsystem level design optimization approach

Silicon carbide (SiC) power semiconductor technology has successfully penetrated several silicon (Si) application markets and is gaining momentum due to higher voltage withstand capability, higher switching capabilities (i.e., 100s of kHz), and ability to withstand higher operating temperatures (i.e., more than 200°C). When properly applied, SiC MOSFETs can switch in nanoseconds making this a promising candidate for high-power, high-temperature, highspeed, and high-efficiency power converter applications. In fact, many consider the SiC MOSFET as the most “ideal” power semiconductor switch developed to date. To maximize the benefit of this fast switching power device, it is necessary to exercise extraordinary care when designing the power converter's subsystems. In this paper, an approach based on a subsystem optimization approach is presented wherein the power module, the DC and AC bus structures, the DC link capacitor bank, and the gate driver controls are discussed for a 16 kg, 250 kW all-SiC three-phase inverter.