Abstract:
A possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented an...Show MoreMetadata
Abstract:
A possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.
Published in: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
Date of Conference: 25-28 October 2016
Date Added to IEEE Xplore: 03 August 2017
ISBN Information:
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