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Energetic ion radiation effects on a silicon carbide (SiC) multimode resonating diaphragm | IEEE Conference Publication | IEEE Xplore

Energetic ion radiation effects on a silicon carbide (SiC) multimode resonating diaphragm


Abstract:

We report on measuring radiation effects of energetic oxygen ions on silicon carbide (SiC) diaphragm resonators. Micromachined SiC diaphragms (1 mm × 1 mm × 2μm) vibratin...Show More

Abstract:

We report on measuring radiation effects of energetic oxygen ions on silicon carbide (SiC) diaphragm resonators. Micromachined SiC diaphragms (1 mm × 1 mm × 2μm) vibrating at ~200-800 kHz on multimode resonances are exposed to 14.3 MeV oxygen ions to sensitively probe the radiation effects of high-energy ions. We have observed frequency redshifts as large as ~2.6%, as well as quality (Q) factor degradation in the multimode resonances of the SiC diaphragm. Non-ionizing energy loss (NIEL) damages appear to play a dominant role for such changes, with an equivalent NIEL dose of ~7.3×1010/cm2, a value simulated from the stopping and range of ions in matter (SRIM).
Date of Conference: 18-22 June 2017
Date Added to IEEE Xplore: 27 July 2017
ISBN Information:
Electronic ISSN: 2167-0021
Conference Location: Kaohsiung, Taiwan

References

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