Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics | IEEE Journals & Magazine | IEEE Xplore

Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics


Abstract:

In this letter, we present a compact model and analyze the impact of key parameters on negative capacitance FinFET (NC-FinFET) device operation. The developed model solve...Show More

Abstract:

In this letter, we present a compact model and analyze the impact of key parameters on negative capacitance FinFET (NC-FinFET) device operation. The developed model solves FinFET device electrostatics and Landau–Khalatnikov equations self-consistently. An experimental NC-FinFET device is accurately modeled and the experimentally calibrated parameters are used to analyze the NC-FinFETs device performance and its dependence on several key parameters.
Published in: IEEE Electron Device Letters ( Volume: 38, Issue: 1, January 2017)
Page(s): 142 - 144
Date of Publication: 14 November 2016

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