Abstract:
We demonstrate for the first time that carbon incorporation in Si epitaxial layers may be an alternative method to deposit enhanced mobility tensile-strained Si MOSFET ch...Show MoreMetadata
Abstract:
We demonstrate for the first time that carbon incorporation in Si epitaxial layers may be an alternative method to deposit enhanced mobility tensile-strained Si MOSFET channel layers directly on a silicon substrate, thereby eliminating the need to deposit a thick relaxed SiGe buffer layer, from which dislocations and other defects can propagate to the channel region. The fabrication and electrical properties of PMOSFETs with Si/sub 1-y/C/sub y/ alloy channel layers are reported in this paper for the first time. It is found that small amounts of C in Si films can produce high quality epitaxial material. PMOSFETs fabricated on these layers demonstrate enhanced hole mobility over that of control Si.
Published in: IEEE Electron Device Letters ( Volume: 20, Issue: 7, July 1999)
DOI: 10.1109/55.772369
Microelectronics Research Center, University of Technology, Austin, TX, USA
Indian Institute of Technology, Kharagpur, India
Microelectronics Research Center, University of Technology, Austin, TX, USA
Microelectronics Research Center, University of Technology, Austin, TX, USA
Microelectronics Research Center, University of Technology, Austin, TX, USA
Indian Institute of Technology, Kharagpur, India
Microelectronics Research Center, University of Technology, Austin, TX, USA
Microelectronics Research Center, University of Technology, Austin, TX, USA
