Abstract:
In this paper, the junctionless (JL) ultrathin polycrystalline-Si (poly-Si) nanowire (NW) transistors with gate-all-around configuration and raised source/drain were succ...Show MoreMetadata
Abstract:
In this paper, the junctionless (JL) ultrathin polycrystalline-Si (poly-Si) nanowire (NW) transistors with gate-all-around configuration and raised source/drain were successfully fabricated by a low-temperature trimming process. The 140 °C-heated phosphoric acid (HPA) was adopted for trimming the channel dimension, which exhibits a near roughness degradation-free etching and excellent trimming uniformity. As the HPA immersing time increased, the channel dimension was thinned and narrowed, resulting in the greater electrostatic integrity. Therefore, the steep subthreshold swing ~75 mV/decade, low drain-induced barrier lowering ~33 mV/V, and high on/off currents ratio ( I_{\mathrm{\scriptscriptstyle ON}}/I_{\mathrm{\scriptscriptstyle OFF}}) \sim 7 \times 10^{6} can be achieved. These superior characteristics of low-temperature JL poly-Si NW transistors are promising candidates for the low thermal budget monolithic 3-D ICs and the system on panel applications in the future.
Published in: IEEE Transactions on Electron Devices ( Volume: 63, Issue: 12, December 2016)