Abstract:
In this paper, we have successfully demonstrated high quality Extremely-thin body (ETB) Ge-on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Further...Show MoreMetadata
Abstract:
In this paper, we have successfully demonstrated high quality Extremely-thin body (ETB) Ge-on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Furthermore, the hole mobility and the GOI thickness dependence over a wide range of GOI thickness down to 2 nm are systematically analyzed and understood from the viewpoint of the scattering mechanisms, for the first time.
Published in: 2015 IEEE International Electron Devices Meeting (IEDM)
Date of Conference: 07-09 December 2015
Date Added to IEEE Xplore: 18 February 2016
ISBN Information:
Electronic ISSN: 2156-017X