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A 330 GHz hetero-integrated source in InP-on-BiCMOS technology | IEEE Conference Publication | IEEE Xplore

A 330 GHz hetero-integrated source in InP-on-BiCMOS technology


Abstract:

This paper presents a 330 GHz hetero-integrated signal source using InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 μm ...Show More

Abstract:

This paper presents a 330 GHz hetero-integrated signal source using InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 μm BiCMOS technology and a frequency quadrupler in 0.8 μm transferred substrate (TS) InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level BCB bonding process. The fundamental VCO operates at 82 GHz and the combined source delivers -12 dBm output power at 328 GHz. To the knowledge of the authors, this is the first hetero-integrated signal source in the frequency range beyond 300 GHz reported so far. It demonstrates the potential of the hetero-integration process for THz frequencies.
Date of Conference: 17-22 May 2015
Date Added to IEEE Xplore: 27 July 2015
Electronic ISBN:978-1-4799-8275-2
Print ISSN: 0149-645X
Conference Location: Phoenix, AZ, USA

References

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