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W-band SiGe power amplifiers | IEEE Conference Publication | IEEE Xplore

Abstract:

This paper presents W-band cascode power amplifiers implemented in a 90 nm SiGe BiCMOS technology. The one-way cascode PA achieves a saturated output power of 18.0 dBm wi...Show More

Abstract:

This paper presents W-band cascode power amplifiers implemented in a 90 nm SiGe BiCMOS technology. The one-way cascode PA achieves a saturated output power of 18.0 dBm with 17.2% peak PAE at 93 GHz. The two-way power-combined cascode PA achieves a saturated output power of 20.8 dBm with 14.5% peak PAE at 93 GHz. The one-way PA and two-way power-combined SiGe PAs occupy an area of 0.29 mm2 and 0.57 mm2 without pads, respectively. To the authors' best knowledge, this work demonstrates the highest PAEs and associated output powers achieved by W-band PAs in any silicon-based technology to date.
Date of Conference: 28 September 2014 - 01 October 2014
Date Added to IEEE Xplore: 11 December 2014
Electronic ISBN:978-1-4799-7230-2

ISSN Information:

Conference Location: Coronado, CA, USA

References

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