Abstract:
Sn2Sb2S5 thin films were elaborated by vacuum thermal evaporation and annealed at different temperatures during lh in air atmosphere. XRD data analysis shows that anneale...Show MoreMetadata
Abstract:
Sn2Sb2S5 thin films were elaborated by vacuum thermal evaporation and annealed at different temperatures during lh in air atmosphere. XRD data analysis shows that annealed films crystallize in the orthorhombic structure according to a preferential direction (602). The optical properties of thin films were determined from the analysis of the experimental recorded transmittance and reflectance data over the wavelength range 300-1800 nm. High absorption coefficients in the range 105-106 cm-1 were reached in the energy range 2-3.25 eV and two optical direct transitions were found. The layers annealed at temperatures greater than 150°C undergo abrupt changes in their electrical properties and exhibit a resistive hysteresis behavior. These properties confer to the material interest perspectives for its application in diverse advanced technologies such as photovoltaic applications and optical storage.
Date of Conference: 25-27 March 2014
Date Added to IEEE Xplore: 19 June 2014
ISBN Information: