Abstract:
The coupling effect between multi-traps in complex RTN is experimentally studied in scaled high-κ/metal-gate MOSFETs for the first time. By using extended STR method, the...Show MoreMetadata
Abstract:
The coupling effect between multi-traps in complex RTN is experimentally studied in scaled high-κ/metal-gate MOSFETs for the first time. By using extended STR method, the narrow “test window” of complex RTN is successfully expanded to full VG swing. Evident defect coupling can be observed in both RTN amplitude and time constants. Interesting nonmonotonic bias-dependence of defect coupling is found, which is due to two competitive mechanisms of Coulomb repulsion and channel percolation conduction. The decreased defect coupling is observed with increasing AC frequency. Based on the new observations on complex RTN, its impacts on the circuit stability are also evaluated, which show an underestimation of the transient performance if not considering defect coupling. The results are helpful for future robust circuit design against RTN.
Published in: 2013 IEEE International Electron Devices Meeting
Date of Conference: 09-11 December 2013
Date Added to IEEE Xplore: 30 January 2014
Electronic ISBN:978-1-4799-2306-9