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Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors | IEEE Journals & Magazine | IEEE Xplore

Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors


Abstract:

A 2-D semianalytical solution for the electrostatic potential valid for junctionless symmetric double-gate field-effect transistors in subthreshold regime is proposed, wh...Show More

Abstract:

A 2-D semianalytical solution for the electrostatic potential valid for junctionless symmetric double-gate field-effect transistors in subthreshold regime is proposed, which is based on the parabolic approximation for the potential and removes previous limitations. Based on such a solution, a semi-analytical expression for the current is derived. The potential and current models are validated through comparisons with TCAD simulations and are used to evaluate relevant short-channel effect parameters, such as threshold roll-off, drain-induced barrier lowering, and inverse subthreshold slope. The implications of different possible definitions of threshold voltage, either based on the potential in the channel or on a fixed current level, are discussed. Finally, a fully analytical simplification for the current is suggested, which can be used in compact models for circuit simulations.
Published in: IEEE Transactions on Electron Devices ( Volume: 60, Issue: 4, April 2013)
Page(s): 1342 - 1348
Date of Publication: 20 March 2013

ISSN Information:


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