Electrical model analysis of RF/high-speed performance for different designed TSV patterns by wideband double side measurement techniques | IEEE Conference Publication | IEEE Xplore

Electrical model analysis of RF/high-speed performance for different designed TSV patterns by wideband double side measurement techniques


Abstract:

Within this paper, four different pitches of Through Silicon Via (TSV) of single-ended ground-signal-ground (GSG) signaling configuration with redistribution layer (RDL) ...Show More

Abstract:

Within this paper, four different pitches of Through Silicon Via (TSV) of single-ended ground-signal-ground (GSG) signaling configuration with redistribution layer (RDL) and testing pad that ranging from 20 µm, 50 µm, 100 µm to 200 µm has been made to verify the Radio-Frequency (RF) characteristic of TSV. We propose the modified RF electrical equivalent model of TSV with its' de-embed patterns. With the help of the direct double side probing system, wide band measurement of S-parameters of up to 40 GHz and eye-diagrams of 40 Gb/s signal are made to validate the modeled results.
Date of Conference: 24-26 October 2012
Date Added to IEEE Xplore: 28 January 2013
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Conference Location: Taipei, Taiwan

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