Controlling uniformity of RRAM characteristics through the forming process | IEEE Conference Publication | IEEE Xplore

Controlling uniformity of RRAM characteristics through the forming process


Abstract:

The proposed constant voltage forming (CVF) is shown to increase the resistances of the low resistance and high resistance states while reducing their variability. By for...Show More

Abstract:

The proposed constant voltage forming (CVF) is shown to increase the resistances of the low resistance and high resistance states while reducing their variability. By forcing the forming in all devices to occur at the same predefined voltage, the CVF method eliminates a major cause of the device-to-device variation associated with the randomness of the forming voltage values. Moreover, both experiments and simulations show that CVF at lower voltages suppresses the parasitic overshoot current, resulting in a more controlled and smaller filament cross-section and lower operation currents.
Date of Conference: 15-19 April 2012
Date Added to IEEE Xplore: 19 July 2012
ISBN Information:

ISSN Information:

Conference Location: Anaheim, CA, USA

References

References is not available for this document.