I. INTRODUCTION
The increasing device power and power densities have been a concern in contemporary electronic packaging due to their impacts on the reliability of power electronics used in a wide range of applications including communication, control and automotive systems. Heat generation rises concurrently with increase in power of semiconductor devices and could result in escalation of peak temperature of the chip. The effective dissipation of this heat energy is vital especially when over-heating has mainly resulted in the failure of electronic devices [1]. Thermal interface materials (TIMs) though constituting a very thin layer in chip-scale packaged power devices, play a key role in the enhancement of thermal transfer from the silicon die (chip) to the heat spreader/sink for efficient heat dissipation [2]. TIMs are usually employed in the die bond region as a result of their higher thermal conductivities compared to polymer-based TIMs [3], [4].