Abstract:
In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the ...Show MoreMetadata
Abstract:
In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.
Published in: Proceedings of the IEEE ( Volume: 98, Issue: 12, December 2010)
The Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
H.-S. Philip Wong (Fellow, IEEE) received the B.Sc. (honors) degree from the University of Hong Kong, Hong Kong, in 1982, the M.S. degree from the State University of New York at Stony Brook, Stony Brook, in 1983, and the Ph.D. degree from Lehigh University, Bethlehem, PA, in 1988, all in electrical engineering.
He joined the IBM T. J. Watson Research Center, Yorktown Heights, NY, in 1988. In September 2004, he joined Stan...Show More
H.-S. Philip Wong (Fellow, IEEE) received the B.Sc. (honors) degree from the University of Hong Kong, Hong Kong, in 1982, the M.S. degree from the State University of New York at Stony Brook, Stony Brook, in 1983, and the Ph.D. degree from Lehigh University, Bethlehem, PA, in 1988, all in electrical engineering.
He joined the IBM T. J. Watson Research Center, Yorktown Heights, NY, in 1988. In September 2004, he joined Stan...View more
IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
Simone Raoux (Senior Member, IEEE) received the M.S. degree in physics and the Ph.D. degree in physics from Humboldt University, Berlin, Germany, in 1984 and 1988, respectively.
She is a Research Staff Member at the IBM T. J. Watson Research Center, Yorktown Heights, NY. From 1988 to 1991, she worked as a Staff Scientist at the Institute for Electron Physics, Berlin, Germany, doing research in the field of electrical break...Show More
Simone Raoux (Senior Member, IEEE) received the M.S. degree in physics and the Ph.D. degree in physics from Humboldt University, Berlin, Germany, in 1984 and 1988, respectively.
She is a Research Staff Member at the IBM T. J. Watson Research Center, Yorktown Heights, NY. From 1988 to 1991, she worked as a Staff Scientist at the Institute for Electron Physics, Berlin, Germany, doing research in the field of electrical break...View more
The Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
SangBum Kim received the B.S. degree from Seoul National University, Seoul, Korea, in 2001 and the M.S. and Ph.D. degrees from Stanford University, Stanford, CA, in 2005 and 2010, respectively, all in electrical engineering. His Ph.D. dissertation focused on scalability and reliability of phase change memory (PCM) including scaling rule analysis, germanium nanowire diode as a scalable selection device, thermal disturbance...Show More
SangBum Kim received the B.S. degree from Seoul National University, Seoul, Korea, in 2001 and the M.S. and Ph.D. degrees from Stanford University, Stanford, CA, in 2005 and 2010, respectively, all in electrical engineering. His Ph.D. dissertation focused on scalability and reliability of phase change memory (PCM) including scaling rule analysis, germanium nanowire diode as a scalable selection device, thermal disturbance...View more
The Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
Jiale Liang (Student Member, IEEE) received the B.S. degree in microelectronics from the Department of Microelectronics, Peking University, Beijing, China, in 2007 and the M.S. degree in electrical engineering from Stanford University, Stanford, CA, in 2009, where she is currently working towards the Ph.D. degree in electrical engineering.
She is currently working on the fabrication and characterization of low-temperature ...Show More
Jiale Liang (Student Member, IEEE) received the B.S. degree in microelectronics from the Department of Microelectronics, Peking University, Beijing, China, in 2007 and the M.S. degree in electrical engineering from Stanford University, Stanford, CA, in 2009, where she is currently working towards the Ph.D. degree in electrical engineering.
She is currently working on the fabrication and characterization of low-temperature ...View more
Intel Corporation Limited, Santa Clara, CA, USA
John P. Reifenberg received the B.S. degree in mechanical engineering with Departmental, College and University Honors from Carnegie Mellon University, Pittsburgh, PA, in 2003 and the M.S. and Ph.D. degrees in mechanical engineering from Stanford University, Stanford, CA, in 2006 and 2010, respectively. His graduate research focused on photothermal and electrical metrology techniques, modeling, and experiment design for u...Show More
John P. Reifenberg received the B.S. degree in mechanical engineering with Departmental, College and University Honors from Carnegie Mellon University, Pittsburgh, PA, in 2003 and the M.S. and Ph.D. degrees in mechanical engineering from Stanford University, Stanford, CA, in 2006 and 2010, respectively. His graduate research focused on photothermal and electrical metrology techniques, modeling, and experiment design for u...View more
IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
Bipin Rajendran (Member, IEEE) received the B.Tech. (honors) degree in instrumentation engineering from Indian Institute of Technology, Kharagpur, India, in 2000 and the M.S. and Ph.D. degrees in electrical engineering from Stanford University, Stanford, CA, in 2003 and 2006, respectively.
Currently, he is a Research Staff Member at IBM T. J. Watson Research Center, Yorktown Heights, NY. He has published more than 25 paper...Show More
Bipin Rajendran (Member, IEEE) received the B.Tech. (honors) degree in instrumentation engineering from Indian Institute of Technology, Kharagpur, India, in 2000 and the M.S. and Ph.D. degrees in electrical engineering from Stanford University, Stanford, CA, in 2003 and 2006, respectively.
Currently, he is a Research Staff Member at IBM T. J. Watson Research Center, Yorktown Heights, NY. He has published more than 25 paper...View more
The Department of Mechanical Engineering, University of Stanford, Stanford, CA, USA
Mehdi Asheghi received the Ph.D. and postdoctoral degrees from Stanford University, Stanford, CA, in 1999 and 2000, respectively, conducting research in the area of nanoscale thermal engineering of microelctronic devices.
Currently, he is a Consulting Associate Professor at Stanford University, focusing on further development of PCRAM technology. He led a well-known and funded research program (2000–2006) at the Carnegie M...Show More
Mehdi Asheghi received the Ph.D. and postdoctoral degrees from Stanford University, Stanford, CA, in 1999 and 2000, respectively, conducting research in the area of nanoscale thermal engineering of microelctronic devices.
Currently, he is a Consulting Associate Professor at Stanford University, focusing on further development of PCRAM technology. He led a well-known and funded research program (2000–2006) at the Carnegie M...View more
The Department of Mechanical Engineering, University of Stanford, Stanford, CA, USA
Kenneth E. Goodson received the Ph.D. degree from the Massachusetts Institute of Technology (MIT), Cambridge, in 1993.
He is the Professor and Vice Chair of Mechanical Engineering at Stanford University, Stanford, CA, where his group studies thermal phenomena in electronic nanostructures and energy conversion devices. His doctoral alumni include Professors at the University of California Berkeley, MIT, the University of Ca...Show More
Kenneth E. Goodson received the Ph.D. degree from the Massachusetts Institute of Technology (MIT), Cambridge, in 1993.
He is the Professor and Vice Chair of Mechanical Engineering at Stanford University, Stanford, CA, where his group studies thermal phenomena in electronic nanostructures and energy conversion devices. His doctoral alumni include Professors at the University of California Berkeley, MIT, the University of Ca...View more
Contents The Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
H.-S. Philip Wong (Fellow, IEEE) received the B.Sc. (honors) degree from the University of Hong Kong, Hong Kong, in 1982, the M.S. degree from the State University of New York at Stony Brook, Stony Brook, in 1983, and the Ph.D. degree from Lehigh University, Bethlehem, PA, in 1988, all in electrical engineering.
He joined the IBM T. J. Watson Research Center, Yorktown Heights, NY, in 1988. In September 2004, he joined Stanford University, Stanford, CA, as a Professor of Electrical Engineering. While at IBM, he worked on CCD and CMOS image sensors, double-gate/multigate MOSFET, device simulations for advanced/novel MOSFET, strained silicon, wafer bonding, ultrathin body SOI, extremely short gate FET, germanium MOSFET, carbon nanotube FET, and phase change memory. He held various positions from Research Staff Member to Manager, and Senior Manager. While he was a Senior Manager, he had the responsibility of shaping and executing IBM's strategy on nanoscale science and technology as well as exploratory silicon devices and semiconductor technology. His research interests are in nanoscale science and technology, semiconductor technology, solid state devices, and electronic imaging. He is interested in exploring new materials, novel fabrication techniques, and novel device concepts for future nanoelectronics systems. Novel devices often enable new concepts in circuit and system designs. His research also includes explorations into circuits and systems that are device driven. His present research covers a broad range of topics including carbon nanotubes, semiconductor nanowires, self-assembly, exploratory logic devices, nanoelectromechanical devices, novel memory devices, and biosensors.
Dr. Wong served on the IEEE Electron Devices Society (EDS) as elected AdCom member from 2001 to 2006. He served on the International Electron Devices Meeting (IEDM) committee from 1998 to 2007 and was the Technical Program Chair in 2006 and General Chair in 2007. He served on the International Solid-State Circuits Conference (ISSCC) program committee from 1998 to 2004, and was the Chair of the Image Sensors, Displays, and Microelectromechanical Systems (MEMS) subcommittee from 2003 to 2004. He serves on the Executive Committee of the Symposia of Very Large Scale Integration (VLSI) Technology and Circuits. He was the Editor-in-Chief of the IEEE Transactions on Nanotechnology in 2005–2006. He is a Distinguished Lecturer of the IEEE Electron Devices Society (since 1999) and Solid-State Circuit Society (2005–2007).
H.-S. Philip Wong (Fellow, IEEE) received the B.Sc. (honors) degree from the University of Hong Kong, Hong Kong, in 1982, the M.S. degree from the State University of New York at Stony Brook, Stony Brook, in 1983, and the Ph.D. degree from Lehigh University, Bethlehem, PA, in 1988, all in electrical engineering.
He joined the IBM T. J. Watson Research Center, Yorktown Heights, NY, in 1988. In September 2004, he joined Stanford University, Stanford, CA, as a Professor of Electrical Engineering. While at IBM, he worked on CCD and CMOS image sensors, double-gate/multigate MOSFET, device simulations for advanced/novel MOSFET, strained silicon, wafer bonding, ultrathin body SOI, extremely short gate FET, germanium MOSFET, carbon nanotube FET, and phase change memory. He held various positions from Research Staff Member to Manager, and Senior Manager. While he was a Senior Manager, he had the responsibility of shaping and executing IBM's strategy on nanoscale science and technology as well as exploratory silicon devices and semiconductor technology. His research interests are in nanoscale science and technology, semiconductor technology, solid state devices, and electronic imaging. He is interested in exploring new materials, novel fabrication techniques, and novel device concepts for future nanoelectronics systems. Novel devices often enable new concepts in circuit and system designs. His research also includes explorations into circuits and systems that are device driven. His present research covers a broad range of topics including carbon nanotubes, semiconductor nanowires, self-assembly, exploratory logic devices, nanoelectromechanical devices, novel memory devices, and biosensors.
Dr. Wong served on the IEEE Electron Devices Society (EDS) as elected AdCom member from 2001 to 2006. He served on the International Electron Devices Meeting (IEDM) committee from 1998 to 2007 and was the Technical Program Chair in 2006 and General Chair in 2007. He served on the International Solid-State Circuits Conference (ISSCC) program committee from 1998 to 2004, and was the Chair of the Image Sensors, Displays, and Microelectromechanical Systems (MEMS) subcommittee from 2003 to 2004. He serves on the Executive Committee of the Symposia of Very Large Scale Integration (VLSI) Technology and Circuits. He was the Editor-in-Chief of the IEEE Transactions on Nanotechnology in 2005–2006. He is a Distinguished Lecturer of the IEEE Electron Devices Society (since 1999) and Solid-State Circuit Society (2005–2007).View more
IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
Simone Raoux (Senior Member, IEEE) received the M.S. degree in physics and the Ph.D. degree in physics from Humboldt University, Berlin, Germany, in 1984 and 1988, respectively.
She is a Research Staff Member at the IBM T. J. Watson Research Center, Yorktown Heights, NY. From 1988 to 1991, she worked as a Staff Scientist at the Institute for Electron Physics, Berlin, Germany, doing research in the field of electrical breakdown. From 1992 to 2000, she was a Staff Scientist at Lawrence Berkeley National Laboratory and performed research in the fields of vacuum arc deposition, ion implantation, photoemission electron microscopy, X-ray magnetic circular dichroism, and near-edge X-ray absorption fine structure spectroscopy. She joined IBM in 2000, first at the IBM Almaden Research Center, and later moved to the IBM T. J. Watson Research Center in 2009. Her research at IBM included materials for magnetic recording and magnetic nanoparticles. Her current research interests focus on the physics and materials science of phase change materials for application in memory technology and synaptronics. She edited a book on phase change materials, contributed chapters to four other books, she is author and coauthor of more than 120 peer-reviewed articles and 180 international conference contributions, and she holds 14 patents.
Simone Raoux (Senior Member, IEEE) received the M.S. degree in physics and the Ph.D. degree in physics from Humboldt University, Berlin, Germany, in 1984 and 1988, respectively.
She is a Research Staff Member at the IBM T. J. Watson Research Center, Yorktown Heights, NY. From 1988 to 1991, she worked as a Staff Scientist at the Institute for Electron Physics, Berlin, Germany, doing research in the field of electrical breakdown. From 1992 to 2000, she was a Staff Scientist at Lawrence Berkeley National Laboratory and performed research in the fields of vacuum arc deposition, ion implantation, photoemission electron microscopy, X-ray magnetic circular dichroism, and near-edge X-ray absorption fine structure spectroscopy. She joined IBM in 2000, first at the IBM Almaden Research Center, and later moved to the IBM T. J. Watson Research Center in 2009. Her research at IBM included materials for magnetic recording and magnetic nanoparticles. Her current research interests focus on the physics and materials science of phase change materials for application in memory technology and synaptronics. She edited a book on phase change materials, contributed chapters to four other books, she is author and coauthor of more than 120 peer-reviewed articles and 180 international conference contributions, and she holds 14 patents.View more
The Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
SangBum Kim received the B.S. degree from Seoul National University, Seoul, Korea, in 2001 and the M.S. and Ph.D. degrees from Stanford University, Stanford, CA, in 2005 and 2010, respectively, all in electrical engineering. His Ph.D. dissertation focused on scalability and reliability of phase change memory (PCM) including scaling rule analysis, germanium nanowire diode as a scalable selection device, thermal disturbance, drift, and threshold switching.
He has held intern positions at Samsung Advanced Institute of Technology (SAIT) in 2007 working on PCM characterization and IBM. T. J. Watson Research Center, Yorktown Heights, NY, in 2007 on higher k gate dielectrics. He is currently a Postdoctoral Researcher at IBM T. J. Watson Research Center. His current research focuses on characterization and modeling of PCM devices.
Dr. Kim was awarded The Korea Foundation for Advanced Studies (KFAS) Scholarship and Samsung Scholarship to support his M.S. and Ph.D. program, respectively.
SangBum Kim received the B.S. degree from Seoul National University, Seoul, Korea, in 2001 and the M.S. and Ph.D. degrees from Stanford University, Stanford, CA, in 2005 and 2010, respectively, all in electrical engineering. His Ph.D. dissertation focused on scalability and reliability of phase change memory (PCM) including scaling rule analysis, germanium nanowire diode as a scalable selection device, thermal disturbance, drift, and threshold switching.
He has held intern positions at Samsung Advanced Institute of Technology (SAIT) in 2007 working on PCM characterization and IBM. T. J. Watson Research Center, Yorktown Heights, NY, in 2007 on higher k gate dielectrics. He is currently a Postdoctoral Researcher at IBM T. J. Watson Research Center. His current research focuses on characterization and modeling of PCM devices.
Dr. Kim was awarded The Korea Foundation for Advanced Studies (KFAS) Scholarship and Samsung Scholarship to support his M.S. and Ph.D. program, respectively.View more
The Department of Electrical Engineering, University of Stanford, Stanford, CA, USA
Jiale Liang (Student Member, IEEE) received the B.S. degree in microelectronics from the Department of Microelectronics, Peking University, Beijing, China, in 2007 and the M.S. degree in electrical engineering from Stanford University, Stanford, CA, in 2009, where she is currently working towards the Ph.D. degree in electrical engineering.
She is currently working on the fabrication and characterization of low-temperature selection device for memory applications. She also works on the simulation and modeling of novel device and memory structures. Her research interests are device modeling, fabrication, and characterization.
Jiale Liang (Student Member, IEEE) received the B.S. degree in microelectronics from the Department of Microelectronics, Peking University, Beijing, China, in 2007 and the M.S. degree in electrical engineering from Stanford University, Stanford, CA, in 2009, where she is currently working towards the Ph.D. degree in electrical engineering.
She is currently working on the fabrication and characterization of low-temperature selection device for memory applications. She also works on the simulation and modeling of novel device and memory structures. Her research interests are device modeling, fabrication, and characterization.View more
Intel Corporation Limited, Santa Clara, CA, USA
John P. Reifenberg received the B.S. degree in mechanical engineering with Departmental, College and University Honors from Carnegie Mellon University, Pittsburgh, PA, in 2003 and the M.S. and Ph.D. degrees in mechanical engineering from Stanford University, Stanford, CA, in 2006 and 2010, respectively. His graduate research focused on photothermal and electrical metrology techniques, modeling, and experiment design for understanding nanoscale thermal phenomena in phase change memory devices.
During his graduate work, he interned at the Intel Corporation developing phase change memory device measurement techniques. He is now a Senior Process Engineer at the Intel Corporation, Santa Clara, CA. His responsibilities center on the development of electron beam lithography systems to advance photomask technology. His interests are in nanoscale thermal physics, nanoscale materials design and metrology, device modeling, design of experiment, and manufacturing optimization.
Dr. Reifenberg's graduate studies were supported by a National Defense Science and Engineering Graduate (NDSEG) Fellowship through the Office of Naval Research (ONR), and he was awarded an Honorary Stanford Graduate Fellowship.
John P. Reifenberg received the B.S. degree in mechanical engineering with Departmental, College and University Honors from Carnegie Mellon University, Pittsburgh, PA, in 2003 and the M.S. and Ph.D. degrees in mechanical engineering from Stanford University, Stanford, CA, in 2006 and 2010, respectively. His graduate research focused on photothermal and electrical metrology techniques, modeling, and experiment design for understanding nanoscale thermal phenomena in phase change memory devices.
During his graduate work, he interned at the Intel Corporation developing phase change memory device measurement techniques. He is now a Senior Process Engineer at the Intel Corporation, Santa Clara, CA. His responsibilities center on the development of electron beam lithography systems to advance photomask technology. His interests are in nanoscale thermal physics, nanoscale materials design and metrology, device modeling, design of experiment, and manufacturing optimization.
Dr. Reifenberg's graduate studies were supported by a National Defense Science and Engineering Graduate (NDSEG) Fellowship through the Office of Naval Research (ONR), and he was awarded an Honorary Stanford Graduate Fellowship.View more
IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
Bipin Rajendran (Member, IEEE) received the B.Tech. (honors) degree in instrumentation engineering from Indian Institute of Technology, Kharagpur, India, in 2000 and the M.S. and Ph.D. degrees in electrical engineering from Stanford University, Stanford, CA, in 2003 and 2006, respectively.
Currently, he is a Research Staff Member at IBM T. J. Watson Research Center, Yorktown Heights, NY. He has published more than 25 papers in peer-reviewed journals and conferences, and has been issued eight U.S. patents. His research interests include design and characterization of novel semiconductor devices and novel materials for memory and logic applications. At IBM, he is involved in exploratory research on phase change memory, involving process integration, device modeling, and electrical characterization.
Bipin Rajendran (Member, IEEE) received the B.Tech. (honors) degree in instrumentation engineering from Indian Institute of Technology, Kharagpur, India, in 2000 and the M.S. and Ph.D. degrees in electrical engineering from Stanford University, Stanford, CA, in 2003 and 2006, respectively.
Currently, he is a Research Staff Member at IBM T. J. Watson Research Center, Yorktown Heights, NY. He has published more than 25 papers in peer-reviewed journals and conferences, and has been issued eight U.S. patents. His research interests include design and characterization of novel semiconductor devices and novel materials for memory and logic applications. At IBM, he is involved in exploratory research on phase change memory, involving process integration, device modeling, and electrical characterization.View more
The Department of Mechanical Engineering, University of Stanford, Stanford, CA, USA
Mehdi Asheghi received the Ph.D. and postdoctoral degrees from Stanford University, Stanford, CA, in 1999 and 2000, respectively, conducting research in the area of nanoscale thermal engineering of microelctronic devices.
Currently, he is a Consulting Associate Professor at Stanford University, focusing on further development of PCRAM technology. He led a well-known and funded research program (2000–2006) at the Carnegie Mellon University, Pittsburgh, PA, that focused on nanoscale thermal phenomena in semiconductor and data storage devices. He is the author of more that 110 book chapters, journal publications, and fully reviewed conference papers.
Mehdi Asheghi received the Ph.D. and postdoctoral degrees from Stanford University, Stanford, CA, in 1999 and 2000, respectively, conducting research in the area of nanoscale thermal engineering of microelctronic devices.
Currently, he is a Consulting Associate Professor at Stanford University, focusing on further development of PCRAM technology. He led a well-known and funded research program (2000–2006) at the Carnegie Mellon University, Pittsburgh, PA, that focused on nanoscale thermal phenomena in semiconductor and data storage devices. He is the author of more that 110 book chapters, journal publications, and fully reviewed conference papers.View more
The Department of Mechanical Engineering, University of Stanford, Stanford, CA, USA
Kenneth E. Goodson received the Ph.D. degree from the Massachusetts Institute of Technology (MIT), Cambridge, in 1993.
He is the Professor and Vice Chair of Mechanical Engineering at Stanford University, Stanford, CA, where his group studies thermal phenomena in electronic nanostructures and energy conversion devices. His doctoral alumni include Professors at the University of California Berkeley, MIT, the University of California Los Angeles, The University of Illinois at Urbana-Champaign, and The University of Michigan, as well as staff at Intel, AMD, and IBM. He has coauthored more than 120 archival journal articles, 24 patents, two books, and eight book chapters. He is a founder and former CTO of Cooligy, which builds microcoolers for computers and was acquired in 2005 by Emerson.
Dr. Goodson received the Allan Kraus Thermal Management Medal from the American Society of Mechanical Engineers (ASME), the Office of Naval Research (ONR) Young Investigator Award, and the National Science Foundation (NSF) Career Award. He received the Outstanding Reviewer Award from the ASME Journal of Heat Transfer, for which he served as an Associate Editor. He was a JSPS Visiting Professor at The Tokyo Institute of Technology and is the Editor-in-Chief of Nanoscale and Microscale Thermophysical Engineering. His research has been recognized through keynote lectures at INTERPACK, ITHERM, and Therminic as well as best paper awards at SEMI-THERM, SRC TECHCON, and the IEDM.
Kenneth E. Goodson received the Ph.D. degree from the Massachusetts Institute of Technology (MIT), Cambridge, in 1993.
He is the Professor and Vice Chair of Mechanical Engineering at Stanford University, Stanford, CA, where his group studies thermal phenomena in electronic nanostructures and energy conversion devices. His doctoral alumni include Professors at the University of California Berkeley, MIT, the University of California Los Angeles, The University of Illinois at Urbana-Champaign, and The University of Michigan, as well as staff at Intel, AMD, and IBM. He has coauthored more than 120 archival journal articles, 24 patents, two books, and eight book chapters. He is a founder and former CTO of Cooligy, which builds microcoolers for computers and was acquired in 2005 by Emerson.
Dr. Goodson received the Allan Kraus Thermal Management Medal from the American Society of Mechanical Engineers (ASME), the Office of Naval Research (ONR) Young Investigator Award, and the National Science Foundation (NSF) Career Award. He received the Outstanding Reviewer Award from the ASME Journal of Heat Transfer, for which he served as an Associate Editor. He was a JSPS Visiting Professor at The Tokyo Institute of Technology and is the Editor-in-Chief of Nanoscale and Microscale Thermophysical Engineering. His research has been recognized through keynote lectures at INTERPACK, ITHERM, and Therminic as well as best paper awards at SEMI-THERM, SRC TECHCON, and the IEDM.View more
