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Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources | IEEE Journals & Magazine | IEEE Xplore

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources


Abstract:

An extremely low contact resistivity of \hbox{6} {-} \hbox{7} \times \hbox{10}^{-9}\ \Omega\cdot\hbox{cm}^{2} between \hbox{Ni}_{0.9}\hbox{Pt}_{0.1}\hbox{Si} and he...Show More

Abstract:

An extremely low contact resistivity of \hbox{6} {-} \hbox{7} \times \hbox{10}^{-9}\ \Omega\cdot\hbox{cm}^{2} between \hbox{Ni}_{0.9}\hbox{Pt}_{0.1}\hbox{Si} and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics.
Published in: IEEE Electron Device Letters ( Volume: 31, Issue: 7, July 2010)
Page(s): 731 - 733
Date of Publication: 27 May 2010

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