Abstract:
An extremely low contact resistivity of \hbox{6} {-} \hbox{7} \times \hbox{10}^{-9}\ \Omega\cdot\hbox{cm}^{2} between \hbox{Ni}_{0.9}\hbox{Pt}_{0.1}\hbox{Si} and he...Show MoreMetadata
Abstract:
An extremely low contact resistivity of \hbox{6} {-} \hbox{7} \times \hbox{10}^{-9}\ \Omega\cdot\hbox{cm}^{2} between \hbox{Ni}_{0.9}\hbox{Pt}_{0.1}\hbox{Si} and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics.
Published in: IEEE Electron Device Letters ( Volume: 31, Issue: 7, July 2010)