A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s | IEEE Conference Publication | IEEE Xplore
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A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s

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G.G. Marotta; A. Macerola; A. D'Alessandro; A. Torsi; C. Cerafogli; C. Lattaro
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Abstract:

A 3.3V 32Gb NAND-Flash memory with 3b/cell is demonstrated in 34nm technology. The device features a programming throughput of 6MB/s on blocks configured as 3b/cell mode ...Show More

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Abstract:

A 3.3V 32Gb NAND-Flash memory with 3b/cell is demonstrated in 34nm technology. The device features a programming throughput of 6MB/s on blocks configured as 3b/cell mode and can dynamically switch up to 13MB/s in 2b/cell mode. A new quad-plane architecture and an optimized programming algorithm are adopted to achieve the design targets.
Published in: 2010 IEEE International Solid-State Circuits Conference - (ISSCC)
Date of Conference: 07-11 February 2010
Date Added to IEEE Xplore: 18 March 2010
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ISSN Information:

DOI: 10.1109/ISSCC.2010.5433949
Conference Location: San Francisco, CA, USA
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